Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L10 phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt ...magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L10 FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin–orbit coupling. The symmetry breaking that generates spin torque within L10 FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L10 FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.
Bulk spin torque‐driven perpendicular magnetization switching in an L10 FePt single‐layer arises from an inherent structural gradient and exhibits great potential for removing the fundamental obstacles faced by conventional spin–orbit torque devices, such as thermal stability issues and complexity issues regarding three‐terminal operation.
The Hall effect has played a vital role in unraveling the intricate properties of electron transport in solid materials. Here, we report on a crystal symmetry-dependent in-plane Hall effect (CIHE) ...observed in a CuPt/CoPt ferromagnetic heterostructure. Unlike the planar Hall effect (PHE), the CIHE in CuPt/CoPt strongly depends on the current flowing direction (ϕ I ) with respect to the crystal structure. It reaches its maximum when the current is applied along the low crystal-symmetry axes and vanishes when applied along the high crystal-symmetry axes, exhibiting an unconventional angular dependence of cos(3ϕ I ). Utilizing a symmetry analysis based on the Invariant Theory, we demonstrate that the CIHE can exist in magnetic crystals possessing C3v symmetry. Using a tight-binding model and realistic first-principles calculations on the metallic heterostructure, we find that the CIHE originates from the trigonal warping of the Fermi surface. Our observations highlight the critical role of crystal symmetry in generating new types of Hall effects.
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques ...that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the "fieldlike" torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.
The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output ...signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.
A phenomenology of magnetic chiral damping is proposed in the context of magnetic materials lacking inversion symmetry. We show that the magnetic damping tensor acquires a component linear in ...magnetization gradient in the form of Lifshitz invariants. We propose different microscopic mechanisms that can produce such a damping in ferromagnetic metals, among which local spin pumping in the presence of an anomalous Hall effect and an effective "s-d" Dzyaloshinskii-Moriya antisymmetric exchange. The implication of this chiral damping in terms of domain-wall motion is investigated in the flow and creep regimes.
Abstract
All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric ...circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of Co
x
Pt
100-
x
single layers within a special composition range (20 <
x
< 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co
30
Pt
70
shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in Co
x
Pt
100-
x
single layer greatly simplifies the SOT structure and avoids additional asymmetric designs.
We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, ...Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy metal (HM), while DMI is more of interfacial origin. In addition, we find that the direction of the domain wall (DW) motion can be either along or against the electron flow depending on the DW tilting angle when there is a large DMI. Such an abnormal DW motion induces a large assist field required for hysteretic magnetization reversal. Our results provide insight into the role of DMI in SOT driven magnetization switching, and demonstrate the feasibility of achieving desirable SOT and DMI for spintronic devices.
The Rashba effect plays important roles in emerging quantum materials physics and potential spintronic applications, entailing both the spin orbit interaction (SOI) and broken inversion symmetry. In ...this work, we devise asymmetric oxide heterostructures of LaAlO
//SrTiO
/LaAlO
(LAO//STO/LAO) to study the Rashba effect in STO with an initial centrosymmetric structure, and broken inversion symmetry is created by the inequivalent bottom and top interfaces due to their opposite polar discontinuities. Furthermore, we report the observation of a transition from the cubic Rashba effect to the coexistence of linear and cubic Rashba effects in the oxide heterostructures, which is controlled by the filling of Ti orbitals. Such asymmetric oxide heterostructures with initially centrosymmetric materials provide a general strategy for tuning the Rashba SOI in artificial quantum materials.
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