The efficacy and complications of extracorporeal shock wave lithotripsy (ESWL) for single gallstones were compared between 15 patients with a CT-lucent stone and 18 patients with a dense calcified ...stone. In all of five patients with a stone smaller than 10 mm in diameter, complete or sufficient clearance was observed, regardless of calcification. However, in 28 patients with a stone larger than 11 mm in diameter, the rates of complete or sufficient clearance were lower in those with a dense calcified stone (64%) than in those with a computed tomography (CT) lucent stone (93%). There was no difference in the rate of complications between patients with a CT-lucent stone and those with a dense calcified stone. These results thus suggest that extracorporeal shock wave lithotripsy may be safely employed for patients with a single calcified gallstone.
'Ultrasonic elliptical vibration cutting' technology, which has been developed by the authors, is applied to ultraprecision machining of single crystal germanium in the present research. The ...germanium is an excellent material for infrared optical devices, whereas ultraprecision micro-machining of the germanium is difficult due to its brittleness. Micro grooving experiments are carried out on the (100), (110) and (111) surfaces of single crystal germanium substrates, and basic effects of the elliptical vibration on the ductile micro-machining are clarified as follows. Critical depth of cut to generate a completely fracture-free surface on the single crystal germanium is increased significantly in all crystal orientations on the (100) and (111) surfaces, and ultraprecision micro grooving is realized successfully at a large depth of cut of 1 mum by applying the elliptical vibration cutting. This improvement by the elliptical vibration cutting is considered to be caused by reduction of instantaneous uncut chip thickness and cutting force in each cycle of the elliptical vibration. When the rake angle becomes negative, influence of the crystal orientation on the critical depth of cut becomes negligible, while it is considerable at 0 degree. On the other hand, the rake angle does not have considerable influence on average values of the critical depth of cut between -20 to 0 degree. The critical depth of cut is increased in all crystal orientations as the cutting speed is reduced in the elliptical vibration cutting
A novel circuit technology has been developed to realize GaAs SRAMs suitable for use in real-system environments. It has achieved Si ECL compatibility through the use of an ECL 100 K-compatible input ...buffer circuit with on-chip reference compensation. Wide V/SUB th/ tolerance and an improved noise margin have been obtained through the use of a novel normally-on-type circuit called the FET logic with Schottky diode and coupling capacitor (FLSC). Two experimental ECL-compatible GaAs SRAMs (256-word/spl times/4-b and 1024-word/spl times/4-b) were designed and successfully fabricated using this technology. In the 4 K SRAM, an access time of 2.2-3.0 ns with a power dissipation of 890 mW was achieved and the normal read/write operation at 4-ns cycle time was also confirmed.
A 69-year-old man was admitted to our hospital with dull upper abdominal pain and appetite loss. Ultrasonography and CT showed about a 7 cm hepatic tumor in the S5 area. Abdominal angiography showed ...that anterior inferior branch of the hepatic artery and portal vein was dislocated. Extended right lobectomy was performed. In pathologically, the tumor was diagnosed as a scirrhous type of hepatocellular carcinoma. Flow cytometric analysis showed the tumor had an aneuploid pattern. The patient died of bone metastasis on the 8th month after the operation. This case was considered to be highly malignant.
An n-well CMOS dynamic RAM Shimohigashi, K.; Masuda, H.; Kamigaki, Y. ...
IEEE transactions on electron devices,
04/1982, Letnik:
29, Številka:
4
Journal Article
Recenzirano
A new n-well CMOS dynamic RAM is proposed. Experimental results with a 4K RAM, fabricated with advanced 2-µm lithography, are presented. For the design of RAM's greater than 256K, two major problems ...need to be solved: the increase in substrate current, and alpha-particle-induced soft errors. The new n-well CMOS RAM technology provides a solution to these problems. Use of PMOS transistors as load elements in peripheral circuits of the n-well CMOS RAM reduces the substrate current by at least two orders of magnitude. In addition, the potential barrier between the n-type, well and the p-type substrate rejects holes generated in the substrate, resulting in the reduction of soft error rates.
An n-Well CMOS Dynamic RAM Katsuhiro, S.; Masuda, H.; Kamigaki, Y. ...
IEEE journal of solid-state circuits,
04/1982, Letnik:
17, Številka:
2
Journal Article
Recenzirano
A new n-well CMOS dynamic RAM is proposed. Experimental results with a 4K RAM, fabricated with advanced 2-/spl mu/m lithography, are presented. For the design of RAM's greater than 256K, two major ...problems need to be solved: the increase in substrate current, and alpha-particle-induced soft errors. The new n-well CMOS RAM technology provides a solution to these problems. Use of PMOS transistors as load elements in peripheral circuits of the n-well CMOS RAM reduces the substrate current by at least two orders of magnitude. In addition, the potential barrier between the n-type well and the p-type substrate rejects holes generated in the substrate, resulting in the reduction of soft error rates.
PDF
