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zadetkov: 1.754
1.
  • Methodology of accounting t... Methodology of accounting technological and operational factors in the process of complex optimal design of micro and nanodevices, manufactured using group technologies
    Meshkov, S A Journal of physics. Conference series, 06/2020, Letnik: 1560, Številka: 1
    Journal Article
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    The problem of ensuring micro and nanodevices' main quality indices (performance, reliability and manufacturability) at design stage is considered. Group technologies used in micro and nanodevices' ...
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2.
  • Justification of technologi... Justification of technological parameters for underground mining of gas-bearing coal beds prone to spontaneous combustion
    Meshkov, S A IOP conference series. Earth and environmental science, 11/2019, Letnik: 378, Številka: 1
    Journal Article
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    The article presents results of the numerical studies of aerodynamic processes in excavated sections of coal mines. The effect of the ventilation and degassing schemes and their parameters on the ...
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3.
  • Design and Technological Op... Design and Technological Optimization of Electrical Parameters of the Wideband Balanced Microwave Frequency Mixer Based on Resonant-Tunneling Diodes
    Cherkasov, K. V.; Meshkov, S. A.; Makeev, M. O. ... Journal of communications technology & electronics, 06/2022, Letnik: 67, Številka: 6
    Journal Article
    Recenzirano

    A solution to the problem of design and technological optimization (DTO) of resonant-tunneling diodes (RTDs) based on the electrical parameters of nonlinear frequency converters (FCs) is proposed to ...
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4.
  • Improving the Resonant-Tunn... Improving the Resonant-Tunneling Diode-Based Subharmonical Mixer’s Reliability by Means of a Design and Technological Optimization Techinque
    Cherkasov, K. V.; Meshkov, S. A.; Makeev, M. O. ... Journal of communications technology & electronics, 12/2022, Letnik: 67, Številka: 12
    Journal Article
    Recenzirano

    The solution of the resonant-tunneling diode-based subharmonic microwave radio signals mixer’s reliability in given operating conditions are presented. The goal was achieved by design and ...
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5.
  • Study of resonant-tunneling... Study of resonant-tunneling diodes I-V curves kinetics under destabilizing factors influence
    Cherkasov, K V; Meshkov, S A; Makeev, M O ... Journal of physics. Conference series, 06/2020, Letnik: 1560, Številka: 1
    Journal Article
    Recenzirano
    Odprti dostop

    Resonant-tunneling diodes (RTD) are prospective EHF and UHF electronics elements. Using RTDs as radio frequency converter's nonlinear element would allow to improve converter's performance indices ...
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6.
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7.
  • RTD application in low powe... RTD application in low power UHF rectifiers
    Sinyakin, V Yu; Makeev, M O; Meshkov, S A Journal of physics. Conference series, 08/2016, Letnik: 741, Številka: 1
    Journal Article
    Recenzirano
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    In the current work, the problem of UHF RFID passive tag sensitivity increase is considered. Tag sensitivity depends on HF signal rectifier efficiency and antenna-rectifier impedance matching. ...
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8.
  • Degradation study of AlAs/G... Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures
    Makeev, M O; Meshkov, S A; Sinyakin, V Yu Journal of physics. Conference series, 11/2017, Letnik: 917, Številka: 9
    Journal Article
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    In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact ...
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9.
  • Kinetics of electrical char... Kinetics of electrical characteristics of balanced SHF mixer based on resonant-tunnelling diodes under operational factors influence
    Cherkasov, K. V.; Meshkov, S. A.; Makeev, M. O. ... Journal of physics. Conference series, 06/2020, Letnik: 1560, Številka: 1
    Journal Article
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    The purpose of this study is to analyze the impact of high temperature and gamma-irradiation on the electrical characteristics of the balanced SHF mixer based on the resonant-tunnelling diodes during ...
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10.
  • Simulation of AlGaAs-hetero... Simulation of AlGaAs-heterostructures CVC kinetic due to degradation
    Shasurin, V D; Vetrova, N A; Meshkov, S A ... Journal of physics. Conference series, 12/2019, Letnik: 1410, Številka: 1
    Journal Article
    Recenzirano
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    A model of degradation of AlGaAs-heterostructures has been developed. Parasitic resistance growth and diffusion of aluminum and donor impurities are considered as the main reasons of degradation of ...
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zadetkov: 1.754

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