The interaction of plasmonic whispering gallery modes on the surface of silver nanospheres with an exciton of the surrounding organic medium has been theoretically studied. DPAVBi ...(4,4'-bis4-(di-ptolylamino) styrylbiphenyl) was selected as an organic material due to its high oscillator strength. The results show that for spheres of sufficiently large radii, several plasmon modes can be localized on their surface at once, which makes them possible for strong coupling with an exciton. The calculated spectra confirm that plasmon modes can effectively interact with excitons in the surrounding organic material, which leads to a significant change in both the absorption and emission characteristics of the system. These observations highlight the potential of such hybrid systems for a number of applications in optoelectronics and photonics, making them a promising platform for further research in this area.
We study and compare optical microcavities formed by GaN planar nanowires. Nanostructures with structural defects such as stacking faults and without defects are considered. The behavior of an ...exciton localized in a stacking fault is considered. Different behavior of the photoluminescence intensity and the photoluminescence decay time is observed for the cases under consideration. Theoretical calculations show the localization of the field at the ends of the structure.
Surface Emitting Quantum-Cascade Ring Laser Babichev, A. V.; Kolodeznyi, E. S.; Gladyshev, A. G. ...
Semiconductors (Woodbury, N.Y.),
07/2021, Letnik:
55, Številka:
7
Journal Article
Recenzirano
Quantum-cascade lasers with surface emission of radiation by means of a grating formed in the upper waveguide cladding layers by ion-beam milling are fabricated and studied. The active region of the ...laser heterostructure is based on the In
0.53
Ga
0.47
As/Al
0.48
In
0.52
As alloy alloys and uses a design with two-phonon resonance emptying of the lower level in the cascade. Room-temperature lasing near 7.9 μm is demonstrated for a laser with a ring-cavity diameter of 191 μm. The mode spacing in the lasing spectra corresponds to whispering-gallery modes.
The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost ...completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.
The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the ...formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy.
Light-emitting devices of modern photonics are based on the semiconductor structures containing layers with various physical parameters. To preserve initial parameters during focused ion beam (FIB) ...lithography, it is necessary to take into account the processes of radiation defect formation. Radiation-induced defects in target play role of nonradiative recombination centers leading to photoluminescence (PL) quenching. In our work, the FIB impact on the photoluminescence were examined using PL spectroscopy of milled Al
0.18
Ga
0.82
As/GaAs double heterostructure. In order to exclude photoexcited carriers losses in emitter layer, an experiment with subbarrier photoexcitation was organized. Finally, we compare our experimental findings with theoretical data proposed by stopping and range of ions in matter (SRIM) calculation.
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