We report a novel electro-thermally coupled power-optimization methodology for future transistors. The methodology self-consistently yields the globally optimized total power and the corresponding ...temperature as a function of delay for a given set of transistors (bulk, double-gate FET, fully depleted SOI, and partially depleted SOI) at future technology nodes. When SPICE models are not necessarily available and simple device models are highly inadequate because of complex 2D device effects, these derived power/temperature versus delay curves serve as a comprehensive standard to compare any two transistors for future technology-node device selections. Because the power optimization is global (over various transistor parameters and includes leakage as well as dynamic power) and is self-consistently coupled to electro-thermal models, the methodology provides the optimum operational supply voltage (V dd ) and the device parameters (body thickness, equivalent oxide thickness, and gate metal work function) for future transistors targeting 45-nm technology node. Furthermore, it can be used to provide insight into advance nodes, device-specific hot-spot problems, multiple V t , V dd design for different functional blocks, transistor design, and evaluating the efficacy of novel thermal solutions such as superior thermal conductivity and subambient cooling.
The aim of this study was to identify the risk factors for bacterial translocation and to determine the clinical significance of bacterial translocation in patients with colorectal cancer. Mesenteric ...lymph node sampling was performed to identify the presence of bacterial translocation in 75 patients with colorectal cancer undergoing laparotomy. Bacterial translocation was identified in 29 patients (39%), with the most common organism being Escherichia coli (31%). Three factors for bacterial translocation were identified, including a preoperative low peripheral lymphocyte count, metastasis to lymph nodes, and invasion depth (= T3). Stepwise regression analysis, however, selected only = T3 odds ratio (OR) 4.0, 95% confidence interval (CI) 1.2‐13.5. Altogether, 35% of patients with bacterial translocation developed septic complications, compared with 20% in patients without bacterial translocation. In the multivariate analysis, bacterial translocation was not an independent risk factor for infection, with an OR of 1.8 (95% CI 0.56‐5.96). Systemic inflammatory response syndrome developed on the first day in 62% of patients with bacterial translocation, compared with 50% of patients without bacterial translocation. Adjusting for the other factors, bacterial translocation was not a significant risk factor in the occurrence of systemic inflammatory response syndrome after surgery (OR 1.1, 95% CI 0.37‐3.29). We concluded that n patients with colorectal cancers bacterial translocation does occur and is increased in patients with deep invasion. However, it appears to be of no clinical significance.
We fabricate CirD lasers with a semicircular output port attached to the end of the waveguide and evaluate them by optical pumping. We have experimentally confirmed that the spread of the output ...light is suppressed when the output port is present.
The degradation of magnetic tunnel junctions (MTJs) with AlO sub(x) barrier was experimentally investigated. Constant voltage stress (CVS) measurement was carried out to monitor the time evolution of ...the conductance and tunneling magnetoresistance (TMR) of MTJs. The gradual increase of the stress-induced leakage current (SILC) was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2-0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.
A rare case of intraductal papillary mucinous tumor of the pancreas associated with a replaced common hepatic artery and celiac axis occlusion, which was treated by pancreatoduodenectomy, is ...reported. In this patient, the celiac trunk was occluded at its root and the splenic and left gastric artery could be visualized serially via the enlarged collateral artery on superior mesenteric arteriography. At surgery, the collateral artery was carefully preserved and pancreatoduodenectomy was successfully performed without ischemia of the stomach, spleen, and remnant pancreas. Although celiac axis occlusion is an uncommon finding for patients undergoing pancreatoduodenectomy, we recommend performing celio-mesenteric angiography before pancreatoduodenectomy, and, at surgery, clamping of the gastroduodenal artery is required for patients with celiac axis occlusion.
Cleft lip is a common congenital malformation, and labioplasty performed on infants to repair such defects often results in severe scar formation. Since TGF-beta 3 has been implicated in wound ...healing, we therefore hypothesized that TGF-beta 3 functions to reduce scarring after cleft lip repair. In this investigation, we demonstrated that exogenous TGF-beta 3 reduced scar formation in an incised and sutured mouse lip in vivo. During labioplasty, endogenous TGF-beta 3 expression was also elevated. In vitro experiments showed that exogenous TGF-beta 3 reduced type I collagen accumulation. Furthermore, TGF-beta 3 inhibited alpha-smooth-muscle actin expression, a marker for myofibroblasts. In tandem, TGF-beta 3 induced the expression and activity of MMP-9. Analysis of our data suggests that TGF-beta 3 is normally secreted following labioplastic wound healing. An elevated level of TGF-beta 3 reduces type I collagen deposition by restricting myofibroblast differentiation and thereby collagen synthesis, and by promoting collagen degradation by MMP-9. In combination, these events lead to TGF-beta 3-mediated reduced scar formation.
Cleft lip is a common congenital malformation, and labioplasty performed on infants to repair such defects often results in severe scar formation. Since TGF-beta 3 has been implicated in wound ...healing, we therefore hypothesized that TGF-beta 3 functions to reduce scarring after cleft lip repair. In this investigation, we demonstrated that exogenous TGF-beta 3 reduced scar formation in an incised and sutured mouse lip in vivo. During labioplasty, endogenous TGF-beta 3 expression was also elevated. In vitro experiments showed that exogenous TGF-beta 3 reduced type I collagen accumulation. Furthermore, TGF-beta 3 inhibited alpha-smooth-muscle actin expression, a marker for myofibroblasts. In tandem, TGF-beta 3 induced the expression and activity of MMP-9. Analysis of our data suggests that TGF-beta 3 is normally secreted following labioplastic wound healing. An elevated level of TGF-beta 3 reduces type I collagen deposition by restricting myofibroblast differentiation and thereby collagen synthesis, and by promoting collagen degradation by MMP-9. In combination, these events lead to TGF-beta 3-mediated reduced scar formation.
A design method for RF power Si-MOSFETs suitable for low-voltage operation with high power-added efficiency is presented. In our experiments, supply voltages from 1 V to 3 V are examined. As the ...supply voltage is decreased, degradation of transconductance also takes place. However, this problem is overcome, even at extremely low supply voltages, by adopting a short gate length and also increasing the N/sup -/ extension impurity concentration-which determines the source-drain breakdown voltage (V/sub dss/)-and thinning the gate oxide-which determines the TDDB between gate and drain. Additionally, in order to reduce gate resistance, the Co-salicide process is adopted instead of metal gates. With salicide gates, a 0.2 /spl mu/m gate length is easily achieved by poly Si RIE etching, while if metal gates were chosen, the metal film itself would have to be etched by RIE and it would be difficult to achieve such a small gate length. Although the resistance of a Co-salicided gate is higher than that of metal gate, there is no evidence of a difference in power-added efficiency when the finger length is below 100 /spl mu/m. It is demonstrated that 0.2 /spl mu/m gate length Co-salicided Si MOSFETs can achieve a high power-added efficiency of more than 50% in 2 GHz RF operation with an adequate breakdown voltage (V/sub dss/). In particular, an efficiency of more than 50% was confirmed at the very low supply voltage of 1.0 V, as well as at higher supply voltages such as 2 V and 3 V. Small gate length Co-salicided Si-MOSFETs are a good candidate for low-voltage, high-efficiency RF power circuits operating in the 2 GHz range.
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