We have developed a reliable and versatile technique for fabricating SNS junctions in a superconductor-normal metal bilayer using a focused ion beam microscope (FIB) in conjunction with an in-situ ...resistance measurement technique. This technique offers a simple method for creating multi-junction devices (SQUIDs, 3-terminal devices, arrays) with high integration densities. In this paper we discuss recent results from devices created in Nb-Cu tracks by cutting 50 nm trenches in the top Nb layer to weaken the superconducting coupling. Cuts of depths between 60 and 100% of the Nb thickness yield reproducible junctions with current voltage (I(V)) characteristics in accordance with the resistively-shunted-junction (RSJ) model, characteristic voltage I/sub C/R/sub N//spl sim/50 /spl mu/V at 4.2 K and excellent microwave response. A thorough study has been carried out of the effect on device parameters of varying the Cu layer thickness (0-175 nm). In addition transmission electron microscopy (TEM) studies have been carried out on the device structure. A two-channel model of device operation has been developed and related to the results of I/sup C/R/sub N/(T) measurements (down to 350 mK) on selected devices.
Mismatched family donor and unrelated donor BM transplants are associated with a high risk of acute GvHD. While T-cell depletion is the best method to reduce risk of acute GvHD, there was a ...reluctance to use T-cell depletion in the mismatched setting because of increased risk of rejection and relapse. Partial T-cell depletion, by the panning of CDS and CD8 positive T cells may reduce complications related to GvHD without compromising outcomes.
In a long-term follow-up of a Phase II study of partial T-cell depletion by panning for BM transplant, 32 recipients received transplants from a single-Ag (HLA A, B, or DR) mismatched family donor; or an HLA serologically-matched unrelated donor. Patients were studied for engraftment, GHD, relapse and survival.
30 (94%) of the patients marrow engrafted. The cumulative risk of Grade 2-4 acute GvHD was 62±9%; of Grade 3–4 GvHD, 11±6%. The 4-year cumulative risk of relapse was 18±8% and actuarial survival was 44±9%.
Partial T-cell depletion had a low rate of severe acute GvHD without compromising engrafment or relapse risk.
