Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, ...Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm². Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD⁻LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD⁻Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm². Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.
Performance of NUV-HD Silicon Photomultiplier Technology Piemonte, Claudio; Acerbi, Fabio; Ferri, Alessandro ...
IEEE transactions on electron devices,
2016-March, 2016-3-00, 20160301, Letnik:
63, Številka:
3
Journal Article
Recenzirano
In this paper, we present the full characterization of a new high-density (HD) cell silicon photomultiplier (SiPM) technology for ultraviolet (UV) and blue light detection, named near UV HD SiPM. ...Thanks to an optimized border region around each cell, we were able to develop devices having a very high detection efficiency and, at the same time, a high dynamic range. We produced SiPMs with a square cell pitch of 15, 20, 25, and 30 μm featuring a peak efficiency in the violet region ranging from 40% to 55%, according to the cell size. We tested this technology for time-of-flight positron emission tomography. Using two 4 × 4 mm 2 SiPMs with a 25 × 25 μm 2 cell pitch coupled to 3 × 3 × 5 mm 3 LYSO scintillators, we reached for the first time 100-ps full-width at half-maximum coincidence time resolution. This result was independent of the temperature in a range from 20 °C to -20 °C. At the same time, thanks to the high dynamic range and low correlated noise, we obtained an energy resolution lower than 9% for 511-keV γ-rays.
Recent years have witnessed a growing interest in detectors capable of detecting single photons in the near-infrared (NIR), mainly due to the emergence of new applications such as light detection and ...ranging (LiDAR) for, e.g., autonomous driving. A silicon single-photon avalanche diode is surely one of the most interesting and available technologies, although it yields a low efficiency due to the low absorption coefficient of Si in the NIR. Here, we aim at overcoming this limitation through the integration of complementary metal-oxide-semiconductor (CMOS) -compatible nanostructures on silicon photodetectors. Specifically, we utilize silver grating arrays supporting surface plasmons polaritons (SPPs) to superficially confine the incoming NIR photons and therefore to increase the probability of photons generating an electron-hole pair. First, the plasmonic silver array is geometrically designed using time domain simulation software to achieve maximum detector performance at 950 nm. Then, a plasmonic silver array characterized by a pitch of 535 nm, a dot width of 428 nm, and a metal thickness of 110 nm is integrated by means of the focused ion beam technique on the detector. Finally, the integrated detector is electro-optically characterized, demonstrating a QE of 13% at 950 nm, 2.2 times higher than the reference. This result suggests the realization of a silicon device capable of detecting single NIR photons, at a low cost and with compatibility with standard CMOS technology platforms.
Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a ...no-gain region, such that the active area or
is not sufficient for small pixel sizes. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as the p-stop termination structure is replaced by isolated trenches etched in the silicon itself. In the TI-LGAD process, the p-stop termination structure, typical of LGADs, is replaced by isolating trenches etched in the silicon itself. This modification substantially reduces the size of the no-gain region, thus enabling the implementation of small pixels with an adequate fill factor value. In this article, a systematic characterization of the TI-RD50 production, the first of its kind entirely dedicated to the TI-LGAD technology, is presented. Designs are ranked according to their measured inter-pixel distance, and the time resolution is compared against the regular LGAD technology.
Low Gain Avalanche Diodes (LGADs) are silicon sensors designed to achieve an internal gain in the order of 10 through the impact ionization process. The development of LGADs was pushed forward by ...their application in High Energy Physics (HEP) experiments, where they will be employed to provide measurements of the time of arrival of minimum ionizing particles with a resolution of around 30 ps. The initial technological implementation of the sensors constrains their minimum channel size to be larger than 1 mm 2 , in order to reduce inefficiencies due to the segmentation of the gain structure. The gain of the sensors is kept in the order of 10 to limit the sensor shot noise and their power consumption. In photon science, the gain provided by the sensor can boost the signal-to-noise ratio of the detector system, effectively reducing the x-ray energy threshold of photon counting detectors and the minimum x-ray energy where single photon resolution is achieved in charge integrating detectors. This can improve the hybrid pixel and strip detectors for soft and tender x-rays by simply changing the sensor element of the detector system. Photon science applications in the soft and tender energy range require improvements over the LGADs developed for HEP, in particular the presence of a thin entrance window to provide a satisfactory quantum efficiency and channel size with a pitch of less than 100 μ m. In this review, the fundamental aspects of the LGAD technology are presented, discussing also the ongoing and future developments that are of interest for photon science applications.
FBK VUV-sensitive Silicon Photomultipliers for cryogenic temperatures Capasso, Massimo; Acerbi, Fabio; Borghi, Giacomo ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
12/2020, Letnik:
982
Journal Article
Recenzirano
Fondazione Bruno Kessler (FBK) has been continuously developing and improving silicon photomultiplier technologies, for example with peak efficiency in the blue (near-ultra-violet, NUV), or in the ...green (red–green–blue, RGB) region of the spectrum.
Over the last years there has been a growing interest in silicon photomultipliers (SiPMs) applications at cryogenic temperatures (e.g.: for the readout of the scintillation light from liquefied noble gases in rare-events experiments). One example is the DarkSide-20k experiment, in which LAr scintillation light is detected after wavelength-shifting to match the SiPMs’ spectral response.
A dedicated silicon photomultiplier technology has been developed in FBK: the NUV-HD-Cryo. SiPMs made in such technology reach primary dark count rates of about 2 mHz∕mm2 and an after-pulsing probability of about 12% when biased at 4 V above breakdown in liquid nitrogen (LN). In other experiments, like for example the nEXO experiment, direct detection of vacuum ultra-violet (VUV) light in cryogenic conditions is required. In this case, the sensitivity in VUV has to be combined with the advantages of the “Cryo” technology.
In this contribution, the latest results from the cryogenic characterization of FBK VUV-HD technology for cryogenic temperatures will be presented. Among the produced devices, one promising split has been identified with reduced after-pulsing probability at 100 K, less than “standard” VUV-HD device.
Hybrid pixel detectors have become indispensable at synchrotron and X-ray free-electron laser facilities thanks to their large dynamic range, high frame rate, low noise, and large area. However, at ...energies below 3 keV, the detector performance is often limited because of the poor quantum efficiency of the sensor and the difficulty in achieving single-photon resolution due to the low signal-to-noise ratio. In this paper, we address the quantum efficiency of silicon sensors by refining the design of the entrance window, mainly by passivating the silicon surface and optimizing the dopant profile of the n
region. We present the measurement of the quantum efficiency in the soft X-ray energy range for silicon sensors with several process variations in the fabrication of planar sensors with thin entrance windows. The quantum efficiency for 250 eV photons is increased from almost 0.5% for a standard sensor to up to 62% as a consequence of these developments, comparable to the quantum efficiency of backside-illuminated scientific CMOS sensors. Finally, we discuss the influence of the various process parameters on quantum efficiency and present a strategy for further improvement.
Silicon photomultipliers (SiPMs) are single-photon sensitive solid-state detectors that are becoming popular for several applications, thanks to massive performance improvements over the last years. ...Starting as a replacement for the photomultiplier tube (PMT), they are now used in medical applications, big high-energy physics experiments, nuclear physics experiments, spectroscopy, biology and light detection and ranging (LIDAR) applications. Due to different requirements in terms of detection efficiency, noise, etc., several optimizations have been introduced by the manufacturers; for example, spectral sensitivity has been optimized for visible light, near ultraviolet, vacuum ultraviolet, and near infrared light. Each one of them require specific processes and structural optimization. We present in this paper recent improvements in SiPM performance, owing to a higher cell fill-factor, lower noise, improved silicon materials, and deep trench isolation. We describe issues related to the characterization of analog SiPM, particularly due to the different sources of correlated noise, which have to be distinguished from each other and from the primary pulses. We also describe particular analyses and optimizations conducted for specific applications like the readout of liquid noble gas scintillators, requiring these detectors to operate at cryogenic temperatures.
Due to their high frame rates and dynamic range, large area coverage, and high signal-to-noise ratio, hybrid silicon pixel detectors are an established standard for photon science applications at ...X-ray energies between 2 keV and 20 keV. These properties also make hybrid detectors interesting for experiments with soft X-rays between 200 eV and 2 keV. In this energy range, however, standard hybrid detectors are limited by the quantum efficiency of the sensor and the noise of the readout electronics. These limitations can be overcome by utilizing inverse Low-Gain Avalanche Diode (iLGAD) sensors with an optimized X-ray entrance window. We have developed and characterized a prototype soft X-ray iLGAD sensor bonded to the charge integrating 75 µm pixel JUNGFRAU chip. Cooled to −22°C, the system multiplication factor of the signal generated by an impinging photon is ≥ 11. With this gain, the effective equivalent noise charge of the system is ≤5.5 electrons root-mean-square at a 5 µs integration time. We show that by cooling the system below −50°C, single photon resolution at 200 eV becomes feasible with a signal-to-noise ratio better than 5.
Monitoring Ultra-High Dose Rate (UHDR) beams is one of the multiple challenges posed by the emergent FLASH radiotherapy. Technologies (i.e., gas-filled ionization chambers) nowadays used in ...conventional radiotherapy are no longer effective when applied to UHDR regimes, due to the recombination effect they are affected by, and the time required to collect charges. Exploiting the expertise in the field of silicon sensors’ applications into clinics, the medical physics group of the University and INFN Torino is investigating thin silicon sensors as possible candidates for UHDR beam monitoring, exploiting their excellent spatial resolution and well-developed technology. Silicon sensors of 30 and 45 µm active thicknesses and 0.25, 1 and 2 mm
2
active areas were tested at the SIT ElectronFlash machine (CPFR, Pisa) on 9 MeV electron beams, featuring a pulse duration of 4 µs, a frequency of 1 Hz, and a dose-per-pulse ranging from 1.62 to 10.22 Gy/pulse. The silicon sensors were positioned at the exit of the ElectronFlash applicator, after a solid water build-up slab, and were readout both with an oscilloscope and with a multi-channel front-end readout chip (TERA08). A response linearity extending beyond 10 Gy/pulse was demonstrated by comparison with a reference dosimeter (FlashDiamond), thus fulfilling the first requirement of a potential application in UHDR beam monitoring.
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