The aim of this work is to derive the Gauss four-point quadrature formula using Euler-type identities. The advantage of this approach is that it enables us to obtain estimates of the error for ...functions with low degree of smoothness and also to produce quadrature formulae which contain values of derivatives at the end points of the interval.
High-voltage pixel sensors for ATLAS upgrade Perić, I.; Kreidl, C.; Fischer, P. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
11/2014, Letnik:
765
Journal Article
Recenzirano
Odprti dostop
The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the ...compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.
The vertex detector at the proposed CLIC multi-TeV linear e+e− collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected ...high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at −60V substrate bias, with a single hit resolution of 6.1μm. Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.
Note on an Iyengar type inequality FRANJIC, I; PECARIC, J; PERIC, I
Applied mathematics letters,
07/2006, Letnik:
19, Številka:
7
Journal Article
Recenzirano
Odprti dostop
Using Hayashi’s inequality, an Iyengar type inequality for functions with bounded second derivative is obtained. This result improves a similar result from N. Elezović, J. Pečarić, Steffensen’s ...inequality and estimates of error in trapezoidal rule, Appl. Math. Lett. 11 (6) (1998) 63–69 and, for some classes of functions, the result from X.L. Cheng, The Iyengar type inequality, Appl. Math. Lett. 14 (2001) 975–978.
Towards the large area HVCMOS demonstrator for ATLAS ITk Prathapan, M.; Benoit, M.; Casanova, R. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2019, Letnik:
936
Journal Article
Recenzirano
High Voltage CMOS (HVCMOS) sensor is a proposed cost effective alternative to the existing hybrid sensors in ATLAS ITk pixel barrel for outer layers. To prove the feasibility of HVCMOS sensors in ...ATLAS experiment, a large area demonstrator chip is being designed. This work presents the design details of three HVCMOS sensor chips with an overview of the measurement results of ATLASpix1 which is the first large area (1 cm × 2 cm) prototype in 0.18μm process.
•Architecture overview of three monolithic CMOS detector prototypes.•A novel readout scheme called Content Addressable Buffer readout is proposed.•The proposed readout scheme is proven to be working under laboratory tests.
For the detection of secondary vertices of long lived particles containing bottom and charm quarks at the International Linear Collider (ILC), a DEPFET pixel detector is one of the technologically ...favored options. In a DEPFET sensor a MOSFET pixel detector is integrated on a sidewards depleted silicon bulk sensor, thus combining the advantages of a fully depleted silicon sensor with in-pixel amplification. DEPFET pixel matrices have been characterized in a high energy particle beam. Since the DEPFET is a very high precision device, given its large S/N (> 100) and small pixel size (36 × 22 ¿m 2 ), a DEPFET based pixel telescope consisting of 5 DEPFETs has been developed. The uncertainty on the predicted position for a device under test (DUT) positioned inside the telescope was found to be 1.4 ¿m with the existing device, due to the limited performance of two of the five DEPFET planes. A DEPFET telescope built of 5 modules equivalent to the best plane presented here, would have a track extrapolation error as low as 0.65 ¿m at the DUT plane.
In order to achieve the challenging requirements on the CLIC vertex detector, a range of technology options have been considered in recent years. One prominent idea is the use of active sensors ...implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel readout chips. Recent results have shown the approach to be feasible, though more detailed studies of the performance of such devices, including simulation, are required. The CLICdp collaboration has developed a number of ASICs as part of its vertex detector R&D programme, and here we present results on the performance of a CCPDv3 active sensor glued to a CLICpix readout chip. Charge collection characteristics and tracking performance have been measured over the full expected angular range of incident particles using 120 GeV/c secondary hadron beams from the CERN SPS. Single hit efficiencies have been observed above 99% in the full range of track incidence angles, down to shallow angles. The single hit resolution has also been observed to be stable over this range, with a resolution around 6µm. The measured charge collection characteristics have been compared to simulations carried out using the Sentaurus TCAD finite-element simulation package combined with circuit simulations and parametrisations of the readout chip response. The simulations have also been successfully used to reproduce electric fields, depletion depths and the current–voltage characteristics of the device, and have been further used to make predictions about future device designs.
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