Several clinical studies have yielded conflicting results in examining the effectiveness of bystander CPR (BCPR). The purpose of this pilot study was to determine the effectiveness of BCPR in an ...animal model of cardiac arrest and resuscitation. Ten swine were instrumented for hemodynamic and regional blood flow measurements with tracer microspheres. After two minutes of ventricular fibrillation (VF), the animals received eight minutes of either BCPR (five) or no-bystander CPR (NBCPR; five). Defibrillation was then attempted in both groups. If unsuccessful, CPR was begun and epinephrine 0.02 mg/kg was administered. Defibrillation was attempted again three and one-half minutes after epinephrine administration. Regional myocardial and cerebral blood flows were measured 30 seconds and five and one-half minutes after initiation of BCPR and one minute after epinephrine administration. In the BCPR group, myocardial blood flow was initially 29.0 +/- 33.2 and decreased to 15.0 +/- 21.5 mL/min/100 g during the last two and one-half minutes of BCPR. Cortical cerebral blood flow was initially 2.0 +/- 2.8 and fell to 0.6 +/- 0.8 mL/min/100 g during the last two and one-half minutes of BCPR. There were no statistical differences in myocardial blood flow and cerebral blood flow between the initial or late stages of BCPR (P greater than .14). There were no statistical differences in myocardial blood flow and cerebral blood flow between BCPR and NBCPR groups after epinephrine administration (P greater than .09).
The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of ...data collection, the 84 VELO sensors have been exposed to a range of fluences up to a maximum value of approximately \(\rm{45 \times 10^{12}\,1\,MeV}\) neutron equivalent (\(\rm{1\,MeV\,n_{eq}}\)). At the operational sensor temperature of approximately \(-7\,^{\circ}\rm{C}\), the average rate of sensor current increase is \(18\,\upmu\rm{A}\) per \(\rm{fb^{-1}}\), in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of \(E_{g}=1.16\pm0.03\pm0.04\,\rm{eV}\) obtained. The first observation of n-on-n sensor type inversion at the LHC has been made, occurring at a fluence of around \(15 \times 10 ^{12}\) of \(1\,\rm{MeV\,n_{eq}}\). The only n-on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately \(\rm{3 \times 10^{12}\,1\,MeV\,n_{eq}}\), a decrease in the Effective Depletion Voltage (EDV) of around 25\,V is observed, attributed to oxygen induced removal of boron interstitial sites. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n-on-n type sensors, with rates of \((1.43\pm 0.16) \times 10 ^{-12}\,\rm{V} / \, 1 \, \rm{MeV\,n_{eq}}\) and \((1.35\pm 0.25) \times 10 ^{-12}\,\rm{V} / \, 1 \, \rm{MeV\,n_{eq}}\) measured for n-on-p and n-on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed.
Disasters, particularly earthquakes, volcanoes, floods, war-related complications, famine and infectious epidemics, have been a part of recorded human experience. From Pompeii to the Johnston Flood ...and World War II and the Black Plague to the Spanish Influenza, there have been catastrophic occurrences that will not long be forgotten by either legend or history books. Nevertheless, those occurrences were relatively few and far-between before the mid-twentieth century. Indeed, the nature of disasters has changed since then. From terrorists taking advantage of ‘new technology’ to weather-related events that cause trillions of dollars worth of damages and economic loss, the world has evolved.
There is a worldwide spiraling risk for more frequent catastrophic events involving multiple casualties, not only in terms of acute injury and illness, but also subsequent psychological and public ...health concerns. Today, such events will likely be multinational in nature, even when localized to a particular venue and this require international cooperation in terms of prevention, mitigation and relief. The best approach to preparing for disasters is to expand, modify and enhance current local ∖Jobname: S34055 Batch number: 00060 infrastructures and capabilities for managing the multiple types of disaster scenarios and create a number of inter-facility cooperative agreements in advance. Aside from safer internal locations for ICUs and surgical theaters, certain structural changes will need to be installed such as modified ventilation systems, protected water supplies, decontamination mechanisms and security renovations. A key strategy will be to proliferate interoperable, multi-disciplinary, all-hazards training initiatives such as the AMA National Disaster Life Support courses. Purchases of cadres of antidotes, antibiotics and hemoglobin-based oxygen carriers should be coordinated regionally, stored in secure locations and made readily-available for the applicable disaster scenario.
The development of the optical bio-chemical sensing technology is an extremely important scientific and technological issue for diagnosis and monitoring of diseases, control of industrial processes, ...environmental detection of air and water pollutants. Owing to their distinctive features, chalcogenide amorphous thin films represent a keystone in the manufacture of middle infrared integrated optical devices for a sensitive detection of biological or environmental variations. Since the chalcogenide thin films characteristics, i.e. stoichiometric conformity, structure, roughness or optical properties can be affected by the growth process, the choice and control of the deposition method is crucial. An approach based on the experimental design is undoubtedly a way to be explored allowing fast optimization of chalcogenide film deposition by means of radio frequency sputtering process. Argon (Ar) pressure, working power and deposition time were selected as potentially the most influential factors among all possible. The experimental design analysis confirms the great influence of the Ar pressure on studied responses: chemical composition, refractive index in near-IR (1.55 µm) and middle infrared (6.3 and 7.7 µm), band-gap energy, deposition rate and surface roughness. Depending on the intended application and therefore desired thin film characteristics, mappings of the experimental design meaningfully help to select suitable deposition parameters.
A new luminescent Tb-DOTAGA (1,4,7,10-tetraazacyclododecane-1-glutaric-4,7,10- triacetic acid) complex (TbL) was synthesized and covalently immobilized on a silicon wafer. The grafting process was ...monitored by means of IR and XPS spectroscopies and the optical properties of the functionalized silicon wafer (TbL@Si) were investigated by fluorescence experiments. A homemade setup was then implemented in order to follow TbL@Si optical properties in the presence of gaseous nitric oxide (NO). The prima facie results indicated that in the presence of NO, the wafer fluorescence was partially quenched. This quenching was reversible as soon as NO was pumped outside the fluorescence cell, which could be interesting for the further development of lanthanide labelled silicon wafers as gas phase sensors.
Chalcogenide thin films (GeSe2)100−x(Sb2Se3)x (with x=10 and 50) were deposited by Radio-frequency (RF) magnetron sputtering. In order to study the impact of Ar pressure on the structure and the ...composition of selenide thin films structural properties of thin films and targets were investigated by means of Raman scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). Under low pressure (5·10−3mbar), the increase of wrong bonds like Ge(Sb)-Ge(Sb) was confirmed by Raman and also XPS for both composition. The observed structural changes with Ar pressure are linked with modification of the composition of the selenide films analyzed by EDS and XPS. Furthermore for higher Ar pressure (5·10−2mbar), RF sputtered thin film and target structure present a great similarity. These differences driven by Ar pressure modification are probably related to distinctive sputtering rate and mean free path of the particles ejected from target for the different Ar pressures.
•(GeSe2)100−x(Sb2Se3)x thin films were deposited by RF magnetron sputtering.•Structural properties of thin films were studied by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS).•Proportion of M-M bonds (M=Ge, Sb) decreases for higher Ar pressure.•Thin films structure and composition are closer to the glass target for higher Ar pressure.
Films of nonstoichiometric germanium–silicon glasses of two types—GeO
x
SiO
(1 –
x
)
and GeO
x
SiO
2
(1 –
x
)
—are deposited onto cold Si (001) substrates by evaporating GeO
2
and SiO (or SiO
2
...) powders simultaneously in high vacuum. Film samples in their initial (as-deposited) state and after being annealed at 550 and 650°C for 1 h are investigated using IR and Raman spectroscopies and electron microscopy, and their photoluminescence (PL) is studied as well. Raman spectroscopy shows that, in contrast to the initial GeOSiO
2
film, the initial GeOSiO one contains clusters of amorphous germanium, their size being ~3 nm, as found by electron microscopy. The presence of Si–O, Ge–O, and Si–O–Ge bonds in the films is established by IR spectroscopy. Clusters of amorphous germanium are found in both films after annealing at 550°C, while germanium nanocrystals are formed in the films subjected to annealing at 650°C. For the initial films, a broad band with a maximum at 1050 nm is registered in their low-temperature PL spectra, which may originate from such defects as oxygen vacancies and overstoichiometric germanium atoms. Annealing causes structural changes in the films and affects their PL behavior. The films containing germanium nanoclusters give rise to PL with a maximum at 1400–1600 nm, with the defect-related signal being diminished. The temperature dependence of PL intensity exhibits a decreasing behavior, but PL is observed to temperatures as high as 200 K. The contribution of germanium nanocrystals formed at the annealing stage to PL is discussed.
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