We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 GHz) with ...9-dB measured gain at 1 THz. This milestone was achieved with a 25-nm InP HEMT transistor, which exhibits 3.5-dB maximum available gain at 1 and 1.5 THz projected f MAX .
Power Amplification at 0.65 THz Using InP HEMTs Radisic, V.; Leong, K. M. K. H.; Xiaobing Mei ...
IEEE transactions on microwave theory and techniques,
2012-March, 2012-03-00, 20120301, Letnik:
60, Številka:
3
Journal Article
Recenzirano
In this paper, progress toward developing solid-state power-amplifier modules at 0.65 THz is reported. This work is enabled by a >;1 THz f MAX InP HEMT transistor with a 30-nm gate and an integrated ...circuit process specifically tailored for circuits operating at frequencies approaching 1 THz. The building block of the reported amplifier modules is an eight-stage terahertz monolithic integrated circuit (TMIC) amplifier. The first six stages of the TMIC use 20- transistors, while the final two output stages rely on two power-combined 20-μm transistors to increase the output power. For operation at 0.65 THz, the TMIC also relies on integrated electromagnetic transitions for direct coupling with the WR1.5 waveguide of the amplifier package. Two modules are reported, with the first module containing a single TMIC and demonstrating a peak saturated output power of 1.7 mW at 640 GHz with a measured small-signal gain ≥10 dB from 629 to 638 GHz. The second module features two power-combined TMICs to increase output power. This is done using a waveguide Y-junction as both the combiner and splitter. In test, this power-combined module reached a peak output power of 3 mW at 650 GHz and measured small-signal gain ≥10 dB from 625 to 640 GHz.
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined as a function of drain ...current by measurements of the 1-GHz noise of discrete transistors with 50- Ω generator impedance. The dc I-V for the transistors under test are presented and effects of impact-ionization are noted. InP devices with both 100% and 75% indium mole fraction in channel are included. Examples of the design and measurement of very wideband low-noise amplifiers (LNAs) using the tested transistors are presented. At 20-K physical temperature the GaAs LNA achieves 10-K noise over the 0.7-16-GHz range with 16 mW of power and an InP LNA measures 20-K noise over the 6-50-GHz range with 30 mW of power.
An MMIC Low-Noise Amplifier Design Technique Varonen, Mikko; Reeves, Rodrigo; Kangaslahti, Pekka ...
IEEE transactions on microwave theory and techniques,
03/2016, Letnik:
64, Številka:
3
Journal Article
Recenzirano
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special ...consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26-33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.
220-GHz Solid-State Power Amplifier Modules Radisic, V.; Leong, K. M. K. H.; Sarkozy, S. ...
IEEE journal of solid-state circuits,
10/2012, Letnik:
47, Številka:
10
Journal Article
Recenzirano
This paper reports on several solid-state power amplifier (PA) modules operating at frequencies around the 220-GHz propagation window. Included is a single module demonstrating saturated output power ...≥60 mW from 205 to 225 GHz and peak output power of 75 mW at 210 GHz using eight-way on-chip power combining. The output power is further increased by using waveguide power combining with WR-4 waveguide. Results include a single two-way combined module achieving >; 100 mW of power from 210 to 225 GHz and four-way combining using two two-way combiners to reach 185 mW of output power at 210 GHz. The amplifier MMICs uses sub-50-nm InP HEMT transistors, coplanar waveguide (CPW) technology, and on-chip electromagnetic transitions to waveguide. Finally, preliminary burn-in and initial room-temperature lifetest data is shown.
This paper reports on the first demonstration of a micro-integrated pixel operating in the sub-millimeter-wave regime. The pixel consists of a low-noise amplifier realized in InP HEMT, an nIN diode ...detector, and micromachined horn antenna. The monolithic microwave integrated circuits are attached inside a micromachined silicon waveguide through a novel solder ball process, and a micromachined horn antenna caps the waveguide, which completes the pixel. The form factor is > 2500 × reduction from traditional waveguide block packaging. This size reduction, high level of integration, and integration with a horn antenna enables this technology to be scalable to compact 2-D arrays in the sub-millimeter-wave regime. The pixel noise temperature is measured to be ~5400 K, which corresponds to sensitivity of an ideal total-power radiometer (ΔT M ) of ~0.21 K given a 30-ms integration time and bandwidth of 20 GHz.
In this letter we report an ultra-low-noise amplifier module chain in the WR4 frequency range. The amplifier chips were fabricated in a 35 nm InP HEMT technology and packaged in waveguide housings ...utilizing quartz E-plane waveguide probes. When cryogenically cooled to 22 K and measured through a mylar vacuum window, the amplifier module chain achieves a receiver noise temperature of 87 K at 228 GHz and less than a 100 K noise temperature from 217 to 236 GHz. The LNA modules have 21-31 dB gain and the power dissipation is 12.4-15.8 mW. To the best of authors' knowledge, these are the lowest LNA noise temperatures at these frequencies reported to date.
This paper will review the progress of HEMT MMW MMIC technologies developed at Northrop Grumman Aerospace Systems for radiometer sensor applications. Specific HEMT MMIC functions that have been ...developed for the radiometer front-end include the RF LNA, IF LNA and LO driver power amplifiers. We report recent advancements in room and cryogenically operated InP HEMT low noise amplifiers and power amplifiers operating from 1 GHz to 300 GHz and discuss past and present system applications of these MMICs.
Power Amplification at 0.65 THz Using InP HEMTs RADISIC, Vesna; LEONG, Kevin M. K. H; XIAOBING MEI ...
IEEE transactions on microwave theory and techniques,
2012, Letnik:
60, Številka:
3
Journal Article
Indium Phosphide MMIC LNAs are enabling new capabilities in instrument development. The development of arrays of hundreds of cryogenically-cooled millimeter wave receivers has previously been ...challenging, but is now achievable with highly repeatable MMIC processes and advances in cryogenic on-wafer testing of LNAs. We have developed InP HEMT LNA MMICs for the 67-90 GHz frequency band that is the last missing receiver system from the ALMA. These MMICs provided average performance of less than 22.5 K noise temperature over the frequency band and minimum noise temperature of 17.5 K at 72 GHz. These LNAs achieve NT=220K (NF=2.4dB) at 90 GHz for Earth remote sensing instrument on Sentinel-6. Our HRMR (High Resolution Microwave Radiometer) achieves NEDT <; 0.05K enabling Sentinel-6 to measure coastal ocean topography at 3 km resolution with better than 1 cm accuracy.
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