Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si ...qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
The effects of heavy-ion irradiation on the single-event effect performance of the Texas Instruments ADC12DJ3200QML-SP and its JESD204B serialized interface were characterized using the K500 ...Cyclotron facility at Texas A&M University. The results demonstrate latch-up immunity up to LET EFF = 120 MeV-cm 2 /mg at T J = 125°C while operating at the maximum recommended operating supply voltages. Dynamic cross sections for the code error rate of the device and the serialized interface are also presented.
Satake et al. show that glutamate release in the cerebellum causes heterosynaptic depression of GABA release and that AMPA receptors act presynaptically to mediate this phenomenon.
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