Semiconductors, featuring tunable electrical transport, and magnets, featuring tunable spin configurations, form the basis of many information technologies. A long-standing challenge has been to ...realize materials that integrate and connect these two distinct properties. Two-dimensional (2D) materials offer a platform to realize this concept, but known 2D magnetic semiconductors are electrically insulating in their magnetic phase. Here we demonstrate tunable electron transport within the magnetic phase of the 2D semiconductor CrSBr and reveal strong coupling between its magnetic order and charge transport. This provides an opportunity to characterize the layer-dependent magnetic order of CrSBr down to the monolayer via magnetotransport. Exploiting the sensitivity of magnetoresistance to magnetic order, we uncover a second regime characterized by coupling between charge carriers and magnetic defects. The magnetoresistance within this regime can be dynamically and reversibly tuned by varying the carrier concentration using an electrostatic gate, providing a mechanism for controlling charge transport in 2D magnets.
The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced ...superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked MoSe
/WSe
. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.
Abstract
Forming a hetero-interface is a materials-design strategy that can access an astronomically large phase space. However, the immense phase space necessitates a high-throughput approach for an ...optimal interface design. Here we introduce a high-throughput computational framework, InterMatch, for efficiently predicting charge transfer, strain, and superlattice structure of an interface by leveraging the databases of individual bulk materials. Specifically, the algorithm reads in the lattice vectors, density of states, and the stiffness tensors for each material in their isolated form from the Materials Project. From these bulk properties, InterMatch estimates the interfacial properties. We benchmark InterMatch predictions for the charge transfer against experimental measurements and supercell density-functional theory calculations. We then use InterMatch to predict promising interface candidates for doping transition metal dichalcogenide MoSe
2
. Finally, we explain experimental observation of factor of 10 variation in the supercell periodicity within a few microns in graphene/
α
-RuCl
3
by exploring low energy superlattice structures as a function of twist angle using InterMatch. We anticipate our open-source InterMatch algorithm accelerating and guiding ever-growing interfacial design efforts. Moreover, the interface database resulting from the InterMatch searches presented in this paper can be readily accessed online.
Excitons play a dominant role in the optoelectronic properties of atomically thin van der Waals (vdW) semiconductors. These excitons are amenable to on-demand engineering with diverse control knobs, ...including dielectric screening, interlayer hybridization, and moiré potentials. However, external stimuli frequently yield heterogeneous excitonic responses at the nano- and meso-scales, making their spatial characterization with conventional diffraction-limited optics a formidable task. Here, we use a scattering-type scanning near-field optical microscope (s-SNOM) to acquire exciton spectra in atomically thin transition metal dichalcogenide microcrystals with previously unattainable 20 nm resolution. Our nano-optical data revealed material- and stacking-dependent exciton spectra of MoSe
, WSe
, and their heterostructures. Furthermore, we extracted the complex dielectric function of these prototypical vdW semiconductors. s-SNOM hyperspectral images uncovered how the dielectric screening modifies excitons at length scales as short as few nanometers. This work paves the way towards understanding and manipulation of excitons in atomically thin layers at the nanoscale.
Abstract Kagome vanadates A V 3 Sb 5 display unusual low-temperature electronic properties including charge density waves (CDW), whose microscopic origin remains unsettled. Recently, CDW order has ...been discovered in a new material ScV 6 Sn 6 , providing an opportunity to explore whether the onset of CDW leads to unusual electronic properties. Here, we study this question using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). The ARPES measurements show minimal changes to the electronic structure after the onset of CDW. However, STM quasiparticle interference (QPI) measurements show strong dispersing features related to the CDW ordering vectors. A plausible explanation is the presence of a strong momentum-dependent scattering potential peaked at the CDW wavevector, associated with the existence of competing CDW instabilities. Our STM results further indicate that the bands most affected by the CDW are near vHS, analogous to the case of A V 3 Sb 5 despite very different CDW wavevectors.
•The ZnO-Al2O3 nanocomposite were synthesized as high surface area and porous sorbent.•This technique enables one to coat more than 50 SPME once.•This technique is a proper method for determination ...of benzodiazepines.•The method showed satisfactory accuracy, linearity, precision and detection limits for benzodiazepines extraction.•The developed solvent free method proved to be a simple, fast, effective, sensitive and inexpensive method.
A new efficient ZnO-Al2O3 nanocomposite (ZANC) was synthesized to form solid-phase microextraction (SPME) fiber. The prepared fiber was used for trace determination of benzodiazepines by gas chromatography-flame ionization detector in urine samples. The effective parameters on the extraction process including extraction time, salt percentage, desorption time and sample pH were optimized by a factorial design method.
The method was evaluated at the optimum conditions and limits of detection (LODs) were calculated 20 µg/L for diazepam and oxazepam. The method repeatability for oxazepam and diazepam (50 µg/L, n = 4) was calculated at 8.8 % and 6.4 %. Also, the method reproducibility was obtained, 7.45 % and 6.61 % for oxazepam and diazepam (50 µg/L, n = 4). Also, fiber-to-fiber relative standard deviation (RSDs%) for the target analytes were less than 15.5 %. The method linearity is within the range of 62–500 µg/L for diazepam and oxazepam. The ZANC-SPME fiber showed a good lifetime (60 times) with high chemical stability. The high thermal stability of ZANC-SPME fiber was attained at 280 °C. The extraction results of poly dimethylsiloxan/divinyl benzene (PDMS/DVB) fiber were compared by ZANC-SPME fiber. Therefore, the method is proposed as a suitable technique for benzodiazepines detection in the urine sample.
In twisted bilayers of semiconducting transition metal dichalcogenides, a combination of structural rippling and electronic coupling gives rise to periodic moiré potentials that can confine charged ...and neutral excitations1–5. Here we show that the moiré potential in these bilayers at small angles is unexpectedly large, reaching values above 300 meV for the valence band and 150 meV for the conduction band—an order of magnitude larger than theoretical estimates based on interlayer coupling alone. We further demonstrate that the moiré potential is a non-monotonic function of moiré wavelength, reaching a maximum at a moiré period of ~13 nm . This non-monotonicity coincides with a change in the structure of the moiré pattern from a continuous variation of stacking order at small moiré wavelengths to a one-dimensional soliton-dominated structure at large moiré wavelengths. We show that the in-plane structure of the moiré pattern is captured by a continuous mechanical relaxation model, and find that the moiré structure and internal strain, rather than the interlayer coupling, are the dominant factors in determining the moiré potential. Our results demonstrate the potential of using precision moiré structures to create deeply trapped carriers or excitations for quantum electronics and opto-electronics.The electrical potential created by a moiré pattern in twisted transition metal dichalcogenide bilayers can be surprisingly deep, trapping electrons that can possibly be used for opto-electronic or quantum simulation applications.
This thesis investigates the unique properties of 2D devices such as twisted semiconducting bilayers and -RuCl3 heterostructures employing scanning tunneling microscopy (STM) and spectroscopy (STS) ...probes. The research presented here sheds light on the vast opportunities that 2D materials provide in condensed matter systems as well as future device applications. Among 2D materials, transition metal dichalcogenide (TMD) heterobilayers provide a promising platform to study many quantum phenomena such as excitonic states due to their tunability of band gap. In addition, TMDs are excellent candidates to achieve localized states and carrier confinement, crucial for single photon emitters used in quantum computation and information. We begin this thesis with a brief overview of STM/STS and utilizing these techniques on 2D materials in the first and second chapters. The third chapter of this work investigates the twisted bilayer of WSe2 and MoSe2 in the H-stacking configuration using STM/STS which was previously challenging to measure. The spectroscopic results obtained from the heterobilayer indicate that a combination of structural rippling and electronic coupling generates unexpectedly large moiré potentials, in the range of several hundred meV. Our analysis reveals that the moiré structure and internal strain, rather than interlayer coupling, are the main factors of the moiré potential. Large moiré potentials lead to deeply trapped carriers such as electron-hole pairs, so-called excitons. Our findings open new routes toward investigating excitonic states in twisted TMDs.In the next chapter, we investigate the ultralocalized states of twisted WSe2/MoSe2 nanobubbles. Mechanical and electrical nanostructurings are expected to modify the band properties of transition metal dichalcogenides at the nanoscale. To visualize this effect, we use STM and near-field photoluminescence to examine the electronic and optical properties of nanobubbles in the semiconducting heterostructures. Our findings reveal a significant change in the local bandgap at the nanobubble, with a continuous evolution towards the edge of the bubble. Moreover, at the edge of the nanobubble, we show the formation of in gap bound states. A continuous redshift of the interlayer exciton on entering the bubble is also detected by the nano-PL. Using self-consistent Schrodinger-Poisson simulations, we further show that strong doping in the bubble region leading to band bending is responsible for achieving ultralocalized states. Overall, this work demonstrates the potential of 2D TMDs for developing well-controlled optical emitters for quantum technologies and photonics.We next turn to the effect of the electric field in band gap tuning of WSe2/WS2 heterobilayer. Tunability of band gap is a crucial element in device engineering to achieve quantum emitters. The electrostatic gate generates doping and an electric field giving access to continuous tunability, higher doping level, and integration capability to nanoelectronic devices. We employ scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the band properties of twisted heterobilayer with high energy and spatial resolution. We observe continuous band gap tuning up to several hundreds of meV change by sweeping the back gate. We introduced a capacitance model to take into account the finite tip size leading to an enhanced electric field. The result of our calculation captures well the band gap change observed by STS measurements. Our study offers a new route toward creating highly tunable semiconductors for carrier confinement in quantum technology.In the next chapters, we focus on -RuCl3 heterointerfaces. We first explore the nanobubble of graphene/ -RuCl3 to create sharp p-n junctions. The ability to create sharp lateral p-n junctions is a critical requirement for the observation of numerous quantum phenomena. To accomplish this, we used a charge-transfer based heterostructure consisting of graphene and -RuCl3 to create nanoscale lateral p-n junctions in the vicinity of nanobubbles. Our approach relied on a combination of scanning tunneling microscopy (STM) and spectroscopy (STS), as well as scattering-type scanning near-field optical microscopy (s-SNOM), which allowed us to examine both the electronic and optical responses of these nanobubble p-n junctions. Our results showed a massive doping variation across the nanobubble with a band offset of 0.6 eV. Further, we observe the formation of an abrupt junction along nanobubble boundaries with an exceptionally sharp lateral width (<3 nm). This is one order of magnitude smaller length scale than previous lithographic methods. Our work paves the way toward device engineering via interfacial charge transfer in graphene and other low-density 2D materials.In chapter 7, we describe the use of low-temperature scanning tunneling microscopy (STM) measurements to observe the moiré pattern in graphene/ -RuCl3 heterostructure to validate the InterMatch method. This method is effective in predicting the charge transfer, strain, and stability of an interface. The InterMatch method was applied to moire patterns of graphene/ -RuCl3 to predict the stable interface structure. STM topographs show three regions with distinct moire wavelengths due to atomic reconstructions. Using the InterMatch method, we perform a comprehensive mapping of the space of superlattice configurations and we identify the energetically favorable superlattices that occur in a small range of twist angles. This range is consistent with the STM results. Moreover, the spectra on these regions exhibit strong resonances with the spacing between resonances following the expectation from Landau levels on a Dirac spectrum due to strain and doping. The results of our scanning tunneling microscopy (STM) measurements confirm that the InterMatch method is effective in predicting the charge transfer and stability of interfaces between materials.We next investigate WSe2/ -RuCl3 heterostructure through a multi-faceted approach. Our exploration encompassed diverse techniques such as STM, optical measurements. We detect a significant charge transfer between the two layers by STM measurements, leading to a shift in the Fermi level towards the valence band of WSe2. Our findings are supported by optical measurements and DFT calculations, which confirm the p-doped WSe2 observed through STM. The results of this work highlight -RuCl3 potential for contact engineering of TMDs and unlocking their functionalities for the next generation optoelectronic devices. In the last chapter of this thesis, I provide a brief conclusion as well as a few future directions and insights for investigating 2D materials.
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