The ATLAS Forward Proton (AFP) detector consists of two forward detectors located at 205 m and 217 m on either side of the ATLAS experiment. The aim is to measure the momenta and angles of ...diffractively scattered protons. In 2016, two detector stations on one side of the ATLAS interaction point were installed and commissioned. The detector infrastructure and necessary services were installed and are supervised by the Detector Control System (DCS), which is responsible for the coherent and safe operation of the detector. A large variety of used equipment represents a considerable challenge for the AFP DCS design. Industrial Supervisory Control and Data Acquisition (SCADA) product Siemens WinCCOA, together with the CERN Joint Control Project (JCOP) framework and standard industrial and custom developed server applications and protocols are used for reading, processing, monitoring and archiving of the detector parameters. Graphical user interfaces allow for overall detector operation and visualization of the detector status. Parameters, important for the detector safety, are used for alert generation and interlock mechanisms.
The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach ...this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×10
17 O/cm
3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×10
14
cm
−2 (1
MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.
MCC: the Module Controller Chip for the ATLAS Pixel Detector Beccherle, R; Darbo, G; Gagliardi, G ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
10/2002, Letnik:
492, Številka:
1
Journal Article
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In this article we describe the architecture of the Module Controller Chip for the ATLAS Pixel Detector. The project started in 1997 with the definition of the system specifications. A first ...fully-working rad-soft prototype was designed in 1998, while a radiation hard version was submitted in 2000. The 1998 version was used to build pixel detector modules. Results from those modules and from the simulated performance in ATLAS are reported. In the article we also describe the hardware/software tools developed to test the MCC performance at the LHC event rate.
Effect of accidental beam losses on the ATLAS pixel detector Andreazza, A.; Einsweiler, K.; Gemme, C. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2006, Letnik:
565, Številka:
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The ATLAS pixel detector has been designed to sustain a dose of 500
kGy integrated over 10 years of operation. This very substantial radiation hardness should also favor the survival of the detector ...in case of accidental beam losses. The effect of a very intensive beam releasing a high instantaneous dose in the pixel detector has been measured in a short experiment performed at the CERN Proton Synchrotron. The results confirm that the ATLAS pixel detector can survive to beam losses with minimal or no deterioration of performance.
The DELPHI pixels Becks, K.H.; Borghi, P.; Brunet, J.M. ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,
02/1997, Letnik:
386, Številka:
1
Journal Article, Conference Proceeding
Recenzirano
To improve tracking in the very forward direction for running at LEP200, the angular acceptance of the DELPHI Vertex detector has been extended from 45° to 11° with respect to the beam axis. Pixel ...detector crowns cover the region between 25° and 13°. Due to very tight space and material thickness constraints it was necessary to develop new techniques (integrated busses in the detector substrate, high density layout on Kapton, etc.). About 1000 cm
2 of pixels are already installed and working in DELPHI. Techniques, tests and production of these detectors will be described, as well as the main problems encountered during this work.
The ATLAS silicon pixel sensors Alam, M.S; Ciocio, A; Einsweiler, K ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
01/2001, Letnik:
456, Številka:
3
Journal Article
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Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several ...hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.
This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the ...comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindström et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.
Silicon pixel devices as a slow neutron precise position detector Campbell, M.; Heijne, E.H.M.; Kubašta, J. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/1997, Letnik:
395, Številka:
3
Journal Article
Recenzirano
An application of a silicon pixel matrix for precise coordinate measurement of slow neutrons is demonstrated. A layer of
6LiF is used as a neutron converter. Charged particles produced in the ...reaction
6Li(n, α)T are detected by silicon pixel diodes. Such a technique can be used for neutron imaging or neutron radiography.
We measured the spatial resolution of a 300 μm thick 75 × 500
μm silicon pixel detector as a function of the track angle using a 120 GeV pion beam.
We observed that 13% of tracks perpendicular to the ...detector give a signal on two neighboring pixels; this fraction increases to 50% at an angle of 15° w.r.t. the normal incidence direction. The average spatial resolution is 28.2 μm at 0° and 14.6 μm at 15°. The detector efficiency is not affected by the charge sharing between pixels.
Our data agree with the predictions of a simple geometrical model describing the charge sharing in the region between pixels. This model can be the basis for a full simulation of the behaviour of a pixel detector.
Electrical characteristics of silicon pixel detectors Gorelov, I; Gorfine, G; Hoeferkamp, M ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
2002, Letnik:
489, Številka:
1
Journal Article
Recenzirano
Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been ...examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
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