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  • Damage behaviour and anneal... Damage behaviour and annealing of germanium implanted 6H-SiC
    Pacaud, Y.; Hera, V.; Yankov, R.A. ... Proceedings of 11th International Conference on Ion Implantation Technology, 1996
    Conference Proceeding

    The present paper reports a study of the defect reduction and recrystallisation during annealing of Ge/sup +/-implanted 6H-SiC. Implants have been performed at 200 keV with doses of 1/spl ...
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