The Polarized Electrons for Polarized Positrons experiment at the injector of the Continuous Electron Beam Accelerator Facility has demonstrated for the first time the efficient transfer of ...polarization from electrons to positrons produced by the polarized bremsstrahlung radiation induced by a polarized electron beam in a high-Z target. Positron polarization up to 82% have been measured for an initial electron beam momentum of 8.19 MeV/c, limited only by the electron beam polarization. This technique extends polarized positron capabilities from GeV to MeV electron beams, and opens access to polarized positron beam physics to a wide community.
We have measured parity-violating asymmetries in elastic electron-proton and quasielastic electron-deuteron scattering at Q2=0.22 and 0.63 GeV2. They are sensitive to strange quark contributions to ...currents in the nucleon and the nucleon axial-vector current. The results indicate strange quark contributions of approximately < 10% of the charge and magnetic nucleon form factors at these four-momentum transfers. We also present the first measurement of anapole moment effects in the axial-vector current at these four-momentum transfers.
We have measured parity-violating asymmetries in elastic electron-proton scattering over the range of momentum transfers 0.12 < or =Q2 < or =1.0 GeV2. These asymmetries, arising from interference of ...the electromagnetic and neutral weak interactions, are sensitive to strange-quark contributions to the currents of the proton. The measurements were made at Jefferson Laboratory using a toroidal spectrometer to detect the recoiling protons from a liquid hydrogen target. The results indicate nonzero, Q2 dependent, strange-quark contributions and provide new information beyond that obtained in previous experiments.
CsxKySbphotocathodes grown on GaAs and molybdenum substrates were evaluated using a−300kVdc high voltage photogun and diagnostic beam line. Photocathodes grown on GaAs substrates, with varying ...antimony layer thickness (estimated range from 1um), yielded similar thermal emittance per rms laser spot size values (∼0.4mmmrad/mm) but very different operating lifetime. Similar thermal emittance was obtained for a photocathode grown on a molybdenum substrate but with markedly improved lifetime. For this photocathode, no decay in quantum efficiency was measured at 4.5 mA average current and with peak current 0.55 A at the photocathode.
GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for ...proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.
A new dc high voltage spin-polarized photoelectron gun has been constructed that employs a compact inverted-geometry ceramic insulator. Photogun performance at 100 kV bias voltage is summarized.
In the G0 experiment, performed at Jefferson Lab, the parity-violating elastic scattering of electrons from protons and quasi-elastic scattering from deuterons is measured in order to determine the ...neutral weak currents of the nucleon. Asymmetries as small as 1 part-per-million in the scattering of a polarized electron beam are determined using a dedicated apparatus. It consists of specialized beam monitoring and control systems, a cryogenic hydrogen (or deuterium) target, and a superconducting, toroidal magnetic spectrometer equipped with plastic scintillation and aerogel Cherenkov detectors, as well as fast readout electronics for the measurement of individual events. The overall design and performance of this experimental system is discussed.
Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL). ...Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS), atomic force microscopy, and secondary ion mass spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF) photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.
This contribution describes the latest milestones of a multiyear program to build and operate a compact−300kVdc high voltage photogun with inverted insulator geometry and alkali-antimonide ...photocathodes. Photocathode thermal emittance measurements and quantum efficiency charge lifetime measurements at average current up to 4.5 mA are presented, as well as an innovative implementation of ion generation and tracking simulations to explain the benefits of a biased anode to repel beam line ions from the anode-cathode gap, to dramatically improve the operating lifetime of the photogun and eliminate the occurrence of micro-arc discharges.
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