At short gate lengths, narrow multiple-gate FETs (MuGFETs) are known to offer superior short channel effect (SCE) control than their bulk Si counterpart Doyle BS et al. High performance ...fully-depleted tri-gate CMOS transistors. IEEE Electron Dev Lett 2003;24(4):263–5, van Dal MJH et al. Highly manufacturable FinFETs with sub-10
nm fin width and high aspect ratio fabricated with immersion lithography. In: VLSI Symp Tech Dig; 2007. p. 110–1
1,2. In addition, their undoped channels allow a substantial reduction of the threshold voltage (
V
T) mismatch, which makes the MuGFET an excellent candidate for replacing planar MOSFETs in SRAM structures. However, as the Si fin width (
W
fin) and gate length (
L
g) are down-scaled in order to improve the SCE control and current drive, respectively, the gate work function and access resistance (
R
SD) engineering become more challenging.
In this paper, two approaches for optimizing the performance of narrow MuGFETs are reported and analysed: the first one relies on the thickness of their Plasma-Enhanced-ALD (PE-ALD) TiN gate electrode. It is demonstrated that very thin PE-ALD TiN gate electrodes allow improved SCE control and enhanced performance in nMOS MuGFETs. The second approach relies on non-amorphizing ion (boron) implantations for both extension and HDD implantations. A substantial
R
SD reduction is demonstrated for pMOS MuGFETs with Si fin widths down to 10
nm.
We report on the electrical performance of integrated superconducting microwave resonators at millikelvin temperatures. The resonators were successfully integrated into a 300mm process to achieve ...tight material and process control. By careful substrate preparation, optimized growth conditions, patterning and postprocessing, we demonstrate record-high resonator quality factors, with a tight control of the resonance frequencies. We have successfully tested several ultra-low loss resonator materials based on elemental and compound superconductors and benchmarked their electrical performance. This work paves the way towards a robust development platform for superconducting qubit technologies.
The integration of La, Gd, and Lu aluminates in a Charge-Trapping Flash (CTF) memory flow as alternative trapping materials is evaluated. It is found that, in order to control the mixing of the ...aluminates with the tunnel oxide, nitride (for Gd) or nitride + oxide (for La and Lu) buffer layers have to be used. It is also found that during the post-deposition annealing treatments, the nitride buffer layer mixes with the tunnel oxide. This results in very good erase and endurance performance, which is attributed to enhanced hole tunneling from the Si substrate.
In adult mammals, injured axons regrow over long distances in peripheral nerves but fail to do so in the central nervous system.
Analysis of molecular components of tissue environments that allow ...axonal regrowth revealed a dramatic increase in the level
of hemopexin, a heme-transporting protein, in long-term axotomized peripheral nerve. In contrast, hemopexin did not accumulate
in lesioned optic nerve. Sciatic nerve and skeletal muscle, but not brain, were shown to be sites of synthesis of hemopexin.
Thus, hemopexin expression, which can no longer be considered to be liver-specific, correlates with tissular permissivity
for axonal regeneration.
We report a novel self-compliant and self-rectifying resistive switching memory cell, with area-scalable switching currents, featuring a set current density of ~5nA/nm 2 (<;9uA for a 40nm-size cell), ...high on-state half-bias nonlinearity of 10 2 and low reset current density of <;0.6nA/nm 2 (<;1uA@40nm size). The cell can be operated at below ±4V/10ns, with a large on/off window of >10 2 and retention extrapolates to 10yr at 101°C. The switching stack is fully based on ALD processes, using common high-k dielectrics and has a thickness of <;10nm, meeting the 3D Vertical RRAM requirements. Moreover, we point out the nonlinearity-low-current operation interdependence and discuss the scaling potential of the areal switching RRAM for reliable sub-μA current operation in the 10nm-cell size realm.
PDF
