The secondary outcomes were monthly assessments of affective responses used a Visual Analog Scale for opioid craving, the Beck Depression Inventory, Spielberger Anxiety Test, and other Psychometric ...Scales. Between-group outcomes were analysed using mixed model analysis of variance (Mixed ANOVA) and repeated measures with the Tukey test for those who remained and treatment and did not relapse, and between the last measure before dropout with the same measure for those remaining in treatment.
...many publications in Russian journals indicates a lot of methodological mistakes and the same problem was seen in Ph.D. thesis defended in Pavlov First Saint Petersburg State Medical University. ......for near 15 years Pavlov First Saint Petersburg State Medical University provided students the short courses for Ph.D. medical students and young scientists on "Basics of Biomedical Statistics and Design of Preclinical and Clinical Studies" and the course of EBM as elective one for undergraduate students. Since 2015 this course was modified in the block of obligatory courses on “The methodology of scientific research” and two electives on elements of advanced analysis, reporting, and visualization of research results.
Abstract
The presented paper is focused around radiation damage of silicon material under the different ions irradiation. The ion total energy range is 0.7 GeV for
7
Li to 208 GeV for
208
Pb. The ...results of TRIM modeling for the set of six ions are presented. The extracted information about vacancy production allows making first assumptions of the Si degradation dependence on mass and energy of the incident ion.
It was reported that the levels of tetrahydrobiopterin (BH4) are reduced in schizophrenia. However, mechanisms of BH4 deficiency in schizophrenia had not been studied precisely. Objective: the search ...of the association between BH4 deficiency in schizophrenia and a range of biochemical and clinical parameters for the evaluation of the possible mechanisms of BH4 loss and its role in the development of the symptoms. Methods: 93 patients with schizophrenia and 60 healthy volunteers were randomly selected and evaluated with a biochemical examination of BH4, folate, cobalamin (B12), homocysteine, C-reactive protein (CRP), reduced glutathione (GSH) levels in the blood serum.Patients underwent standardized psychopathological examination. Results: In patients, the levels of BH4 and folate were lower (p = 0.001 and p = 0.054, respectively), and the levels of homocysteine were higher (p = 0.012) compared to the control group. BH4 levels directly moderately correlated with folate (ρ = 0.43; p = 0.0029) and B12 levels (ρ = 0.43; p = 0.0020) and inversely moderately correlated with homocysteine levels (ρ = −0.54; p = 0.00015) in patients. Cluster analysis identified schizophrenia biotype characterized by a deficiency of BH4, folate, B12, and hyperhomocysteinemia. The clinical characteristics of this biotype were not specific. CRP and GSH were higher in patients compared to controls, but their association with serum BH4 was not confirmed.
The investigation is focused on the defects in silicon p+-n-n + detectors irradiated with the 53.4 MeV 40Ar ions, which generate a nonuniform defect distribution including a heavily damaged region ...inside the Bragg peak. The dependences of the bulk generation current and of the capacitance on bias voltage and the spectra of radiation-induced defects demonstrate new features: a step in the current rise, a region with a practically constant capacitance, and abnormal dependence of the peak amplitudes of vacancy-related defects on fluence. The changes of the DLTS spectra are assigned to the influence of silicon properties inside the Bragg peak region acting as a highly compensated insulating layer.
The work extends the study of the ionization properties of phosphorus atoms as trapping/emission centres in the electric field of silicon p-n junctions operating at low temperatures. The goal is ...describing the ionization of phosphorus atoms by a single effective parameter, the ionization energy of phosphorus energy levels Eion. An approach to the study is based on manipulating the space charge concentration Neff in a nonirradiated silicon p+/n/n+ structure via filling phosphorus donors with electrons supplied by a laser pulse. Extracting the Neff from the experimental current pulse response shapes recorded at variable temperature and pulse repetition rate allowed building Arrhenius plot for evaluating Eion in the electric field. This value is shown to be 6.4±1.1 meV that is paradoxically low, being about 7 times less than the referred data.
Abstract
The study is devoted to the treatment of
in situ
radiation tests results for silicon p-i-n detectors of relativistic protons, which showed the two-stage process of charge transport with ...avalanche multiplication at a temperature of 1.9 K. The goal of the work is to extract the carrier transport parameters from the experimental data obtained by transient current technique. For that, the impact of a spatial nonuniformity of carrier generation by the laser and spreading of the drifting carrier cloud due to diffusion on the current pulse response formation were considered. The mathematical procedure proposed for the current pulse simulation showed a key contribution of avalanche multiplication in the signal formation and allowed direct estimation of the multiplication factor from the experimental pulses. It is found that this factor only slightly depends on the bias voltage, which suggests the electric field inside the detector to be affected by the space-charge-limited current.
Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving the beam intensity increase up to 10
5
times. The study is focused on the impact of heavily ...damaged Bragg peak region (BPR) at the ion range end on the bulk current of Si sensors irradiated with 53.4 MeV
40
Ar ions in the fluence range (1–4) × 10
9
ion/cm
2
. It is shown that taking into account only the generation current component is insufficient to explain the experimental
I–V
curves. Simulating
I–V
characteristics and the electric field profiles demonstrated arising of a built-in junction in the BPR, which controls hole diffusion at voltages below full depletion voltage. Contribution of this component to the total diode current enabled the agreement between experimental and simulated
I–V
curves.
The development of modern high-energy physics is a powerful incentive for the progress of its experimental base. The use of semiconductor devices is standard for large accelerators and experimental ...setups at LHC, CERN, and perspective as sensors for monitoring beam loss and radiation fields in superconducting magnets and accelerating resonators operating at superfluid helium temperature (1.9 K). In these problems, the optimal type of radiation sensor is a compact silicon detector, the use of which in harsh radiation environment in combination with helium temperatures is a non-trivial task. The most important characteristics of such devices are the distribution of the electric field in the volume and the parameters of charge carrier transport, which determines the detector signal. The study considers specific kinetics of charge collection in silicon detectors at a temperature of 1.9 K in situ irradiated by relativistic hadrons.
The presented study is focused around the TRIM program issues and its applications for prediction of silicon detectors degradation under heavy ions of 40Ar. Results of the simulations of low-energy ...ion (53.4 MeV) and high-energy ion (1.62 GeV) irradiation are demonstrated. Experimental data for silicon p+-n-n+ detectors irradiated by the low energy are also presented. Reliability of TRIM simulations application for studying silicon detectors degradation under heavy ion irradiation is discussed.
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