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zadetkov: 810
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  • 3-Bit Multilevel Switching ... 3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices
    Kim, W.; Menzel, S.; Wouters, D. J. ... IEEE electron device letters 37, Številka: 5
    Journal Article
    Recenzirano

    The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaO x -based resistive random access memory (ReRAM) devices has been studied. Consistently, ...
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13.
  • Exploiting the switching dy... Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
    Cüppers, F.; Menzel, S.; Bengel, C. ... APL materials, 09/2019, Letnik: 7, Številka: 9
    Journal Article
    Recenzirano
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    The utilization of bipolar-type memristive devices for the realization of synaptic connectivity in neural networks strongly depends on the ability of the devices for analog conductance modulation ...
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16.
  • Thin film proton conducting... Thin film proton conducting membranes for micro-solid oxide fuel cells by chemical solution deposition
    Engels, J.; Griesche, D.; Waser, R. ... Thin solid films, 08/2017, Letnik: 636
    Journal Article
    Recenzirano

    Micro solid oxide fuel cells (μ-SOFC) were manufactured with perovskite type proton conductors on silicon substrates and with structured Pt-grid electrodes. In order to miniaturize the μ-SOFCs and to ...
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17.
  • Degradation Kinetics during... Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media
    Bick, D. S; Krebs, T. B; Kleimaier, D ... Langmuir, 01/2018, Letnik: 34, Številka: 4
    Journal Article
    Recenzirano

    The oxygen evolution reaction (OER) during alkaline water electrolysis is the bottleneck of water splitting. Perovskite materials have been particularly proposed as good and economically reasonable ...
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18.
  • Integrated Complementary Re... Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays
    Rosezin, R; Linn, E; Nielen, L ... IEEE electron device letters, 02/2011, Letnik: 32, Številka: 2
    Journal Article
    Recenzirano

    Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive ...
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20.
  • Passive cooling of Li-Ion c... Passive cooling of Li-Ion cells with direct-metal-laser-sintered aluminium heat exchangers filled with phase change materials
    Landini, S.; Waser, R.; Stamatiou, A. ... Applied thermal engineering, 06/2020, Letnik: 173
    Journal Article
    Recenzirano

    •Novel Direct-Metal-Laser-Sintered (DMLS) Aluminium Heat Exchangers (HEX).•DMLS HEX filled with Phase Change Materials (PCM) for Li-Ion cells isothermalisation.•Different operating conditions tested ...
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