Renifolin F is a prenylated chalcone isolated from Shuteria involucrata, a traditional minority ethnic medicine used to treat the respiratory diseases and asthma. Based on the effects of the original ...medicine plant, we established an in vivo mouse model of allergic asthma using ovalbumin (OVA) as an inducer to evaluate the therapeutic effects of Renifolin F. In the research, mice were sensitized and challenged with OVA to establish an allergic asthma model to evaluate the effects of Renifolin F on allergic asthma. The airway hyper-reactivity (AHR) to methacholine, cytokine levels, ILC2s quantity and mircoRNA-155 expression were assessed. We discovered that Renifolin F attenuated AHR and airway inflammation in the OVA-induced asthmatic mouse model by inhibiting the regulation of ILC2s in the lung, thereby, reducing the upstream inflammatory cytokines IL-25, IL-33 and TSLP; the downstream inflammatory cytokines IL-4, IL-5, IL-9 and IL-13 of ILC2s; and the co-stimulatory factors IL-2 and IL-7; as well as the expression of microRNA-155 in the lung. The findings suggest a therapeutic potential of Renifolin F on OVA-induced airway inflammation.
BackgroundHaemodynamic instability and hypoxaemia are common and serious threats to the survival of neonates. A growing body of literature indicates that critical care ultrasound has become the ...optimal evaluation tool for sick neonates. However, few studies have described sonographic characteristics of haemodynamics systematically in the neonates with critical illness. This protocol describes a prospective observational cohort study aimed at (1) characterising the sonographic characteristics of the neonates with critical diseases; and (2) assessing the mortality, significant morbidity, utility of vasoactive medications, fluid resuscitation, duration of ventilation, etc.Methods and analysisThis is a single-centre, prospective and observational study conducted in Chengdu Women’s and Children’s Central Hospital from 1 December 2022 to 31 December 2027. Neonates admitted to the neonatal intensive care unit will be recruited. After inclusion, the neonates will undergo the neonatal critical care ultrasound. The data collected via case report forms include clinical variables and sonographic measures. The primary outcome is to identify the sonographic characteristics of sick neonates with different diseases, and the secondary outcome is to describe the mortality, significant morbidity, utility of vasoactive medications, fluid resuscitation and duration of ventilation.DiscussionOur study provided an organised neonatal critical care ultrasound workflow, which can be applied in practice. Accordingly, this study will first set up large data on the sonographic description of the neonates with critical illness, which can help to understand the pathophysiology of the critical illness, potentially titrating the treatment.Trial registration numberChinese Clinical Trial Registry (ChiCTR2200065581; https://www.chictr.org.cn/com/25/showproj.aspx?proj=184095).
In the realm of photodetection, there has been growing interest in Ferroelectric/semiconductors heterostructures due to the interfacial charge coupling resulting from ferroelectric polarization. In ...this study, we created a thin film consisting of alternating layers of Ba0.86Ca0.14Ti0.9Sn0.1O3 and PbZr0.52Ti0.48O3 (referred to as BCST/PZT) using a sol-gel growth method on a (0001) GaN/c-sapphire template. Our objective was to examine the impact of these films on the optoelectronic properties of ferroelectric/GaN heterojunctions. Our findings indicate that the BCST/PZT multilayer films possess improved ferroelectric properties. Furthermore, the multilayer structure demonstrates outstanding optoelectronic performance compared to the individual BCST/GaN or PZT/GaN structures, particularly within the 1 V to 3 V bias range. Notably, the multilayer thin film/GaN devices exhibit a responsivity of 121.4 mA/W and a detectivity of 1.44 × 1011 Jones under a 1 V bias voltage. In contrast to other GaN-based materials documented in the literature, our straightforward sol-gel techniques yielded devices exhibiting UV photodetection characteristics that are either comparable to or superior than those reported.
•Use the sol-gel method, which is simple and easy to produce large films.•Use of tin and calcium doped barium titanate.•Multilayer BCST/PZT ferroelectric film photodetectors (PDs) have better responsivity (R) and detectivity (D*).•The device shows a significant improvement in photocurrent with 1 V bias applied.
By using the sol-gel spin-coating method, La-InZnO films with different La (0 at%, 2 at%, 4 at%, and 6 at%) doping concentrations were grown on p-GaN / sapphire film templates, and self-driven p-GaN .../ n-ZnO heterojunction ultraviolet (UV) detectors were prepared. The effects of La doping concentration on the microstructure, optical, and electrical properties of synthesized La-InZnO films were studied. In addition, the optical sensing characteristics and photoelectric response performance of four p-n heterojunction UV detectors were compared. La doping can decrease the content of oxygen vacancies. It also reduces the carrier concentration and mobility of the films. At zero bias voltage, the 2 at% doped device has the best performance, with a peak responsivity of 46 mA/W at 366 nm, a high spectral selectivity full width at half maximum (FWHM) of only 6.92 nm, and a fast response with the rise and decay times of 1.15 ms and 2.42 ms, respectively. This study demonstrates a feasible method for improving the performance of self-driven heterojunction UV detectors.
•Simple and easy to prepare large area by sol-gel method.•n-ZnO/p-GaN heterojunction detector can operate without external power supply.•Lanthanide doping can improve detector responsiveness and spectral selectivity, and reduce response time.•2 at% of lanthanum doping is the optimal doping concentration.
This letter reports an Al 0.65 Ga 0.35 N-Al 0.4 Ga 0.6 N metal-oxide-semiconductor-heterojunction-field-effect-transistor (MOSHFET) with an SiO 2 gate-insulator. For this first demonstration of an ...AlGaN channel MOSHFET, a new doped barrier epilayer design led to linear source-drain ohmic-contacts formed by Zr-based metal stack with a contact resistance as low as <inline-formula> <tex-math notation="LaTeX">1.64~\Omega \cdot \textsf {mm} </tex-math></inline-formula>. For a device with 6-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> source-drain opening a record saturation current of 0.6 A/mm (at gate bias of 6V) was measured. In contrast to a conventional Schottky-gate HFET, the gate-oxide from the pulsed plasma enhanced chemical vapor deposition decreased the MOSHFET gate leakage current by a factor of 10 4 with only a 1.5-V shift in the threshold voltage. A drift mobility of 430 cm<inline-formula> <tex-math notation="LaTeX">^{2}/\textsf {V}\cdot \textsf {s} </tex-math></inline-formula> is measured at zero-gate bias, which increases to 800 cm<inline-formula> <tex-math notation="LaTeX">^{2}/\textsf {V}\cdot \textsf {s} </tex-math></inline-formula> close to the threshold voltage. The device characteristics up to 250°C are used to calculate the temperature dependence of the drift mobility.
Describes the properties of novel III-N-based insulating gate heterostructure field-effect transistors (HFETs). For the gate isolation, these devices use either SiO/sub 2/ layer (in ...metal-oxide-semiconductor HFET (MOSHFET) structures) or Si/sub 3/N/sub 4/ layer (in metal-insulator-semiconductor HFET structures). These insulating gate HFETs have the gate-leakage currents 4-6 orders of magnitude lower than HFETs, even at elevated temperatures up to 300/spl deg/C. A double-heterostructure MOSHFET with SiO/sub 2/ gate isolation exhibits current collapse-free performance with extremely low gate-leakage current. Insulating gate devices, including large periphery multigate structures, demonstrate high-power stable operation and might find applications in high-performance power amplifiers and microwave and high-power switches with operating temperatures up to 300/spl deg/C or even higher.
With the development of urban road traffic, road noise pollution is becoming a public concern. Controlling and reducing the harm caused by traffic noise pollution have been the hot spots of traffic ...noise management research. The subjective annoyance level of traffic noise has become one of the most important measurements for evaluating road traffic pollution. There are subjective experimental methods and objective prediction methods to assess the annoyance level of traffic noise: the subjective experimental method usually uses social surveys or listening experiments in laboratories to directly assess the subjective annoyance level, which is highly reliable, but often requires a lot of time and effort. The objective method extracts acoustic features and predicts the annoyance level through model mapping. Combining the above two methods, this paper proposes a deep learning model-based objective annoyance evaluation method, which directly constructs the mapping between the noise and annoyance level based on the listening experimental results and realizes the rapid evaluation of the noise annoyance level. The experimental results show that this method has reduced the mean absolute error by 30% more than the regression algorithm and neural network, while its performance is insufficient in the annoyance interval where samples are lacking. To solve this problem, the algorithm adopts transfer learning to further improve the robustness with a 30% mean absolute error reduction and a 5% improvement in the correlation coefficient between the true results and predicted results. Although the model trained on college students' data has some limitations, it is still a useful attempt to apply deep learning to noise assessment.
Three series of forty-nine novel 4-(3-trifluoromethylphenyl)-2
H
-pyridazin-3-one derivatives are designed, synthesized, and evaluated through a
Spirodela polyrrhiza
test and a greenhouse test. Some ...compounds show > 80% chlorophyll inhibition of
Spirodela polyrrhiza
at 10 μg/mL and exhibit some herbicidal activities against
Digitaria adscendens
in the pre-emergence treatment at a rate of 150 g/ha. Moreover, the study of the structure-activity relationship (SAR) suggests that the appropriate bulky substituent at the right position is critical for the bleaching and herbicidal activities, which may be useful for the future design of new compounds.
We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the ...III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1A/mm 100 μm wide device exceeds 40 W for a 1-mm wide 2-A/mm MOSHFET.
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