Synopsis We investigate the polarization characteristics of terahertz (THz) emission from gaseous plasma induced by the two-color incommensurate femtosecond laser fields, which contains a circularly ...polarized laser field and a linear pulse. Our simulations show that strong linearly, elliptically, and circularly polarized THz radiation can be generated, by choosing appropriate wavelength, carrier-envelope phase and intensity for linear pump pulse.
No standard treatment is currently available for gastroenteropancreatic neuroendocrine carcinomas (GEP-NEC). Therefore, we conducted this study to evaluate the effect of the combination of irinotecan ...and cisplatin in the treatment of GEP-NECs. Clinical data of 16 locally advanced or metastatic GEP-NEC patients treated with irinotecan plus cisplatin regimen in our center from September 2009 to August 2011 were reviewed. The regimen included 2-week cycles of 180 mg/m
2
irinotecan and 50 mg/m
2
cisplatin on day 1. Median age was 57 years. The overall response rate was 57.1 %, with a disease control rate of 78.6 %. One patient achieved pathologic complete response and underwent esophagectomy after chemotherapy. Two patients who had gotten progressive disease were given sequential octreotide long-acting release (LAR) treatment and got disease progression again within 1 month. Six patients who achieved disease control received octreotide LAR as maintenance treatment. The total number of cycles of octreotide was 41, with a median of 4.5 (3–20 cycles). The progression-free survival was 5.5 months, with overall survival of 10.6 months. Grades 3–4 hematological adverse events (AEs) occurred in 10 patients (62.5 %) and 3 patients (18.7 %) suffered grades 3–4 non-hematological AEs; no patient died of AEs. The irinotecan plus cisplatin chemotherapy is moderately effective and tolerable well tolerated in advanced or metastatic GEP-NEC patients; octreotide LAR may be a good maintenance treatment and should be considered as a treatment option for these patients in the future.
The energy-dependent cross section for e + e − → η ψ ( 2 S ) is measured at 18 center of mass energies from 4.288 to 4.951 GeV using the BESIII detector. Using the same data samples, we also perform ...the first search for the reaction e + e − → η X ˜ ( 3872 ) , but no evidence is found for the X ˜ ( 3872 ) in the π + π − J / ψ mass distribution. At each of the 18 center of mass energies, upper limits at the 90% confidence level on the cross section for e + e − → η ψ ( 2 S ) and on the product of the e + e − → η X ˜ ( 3872 ) cross section with the branching fraction of X ˜ ( 3872 ) → π + π − J / ψ are reported. Published by the American Physical Society 2024
A new benzylated alkamide, N-(3-methoxybenzyl)hexadec-9Z-enamide (
1
), and a known analogue (
2
) were isolated from the roots of Lepidium meyenii. Their structures were elucidated by extensive NMR ...and MS spectroscopic analyses. All the isolated alkamides were evaluated for their cytotoxicity against five human cancer cell lines but found to be insignificant at concentrations up to 40 μM.
To investigate the effect of GTPase activating protein Git2 on metastasis in breast cancer.
Git2 gene over-expression was induced by Git2 cDNA, and Git2 gene knockdown was induced by Git2 ShRNA ...lentivirus in four breast cancer cell lines. Six-week old wide type female mice were also used in this study. The cells were tagged with luciferase and injected into wide type female mice by tail vein or 4(th) mammary fat pad, respectively, to establish a cancer metastasis model. In vivo real time imaging system and immunohistochemical staining were used to detect the cancer metastasis.
The relative mRNA expression level of Git2 (normalized by GAPDH) in the 4T1, 4TO7, 168FARN and 67NR cells were 0.91±0.03, 0.125±0.06, 0.131±0.04 and 0.92±0.04, respectively. The expression of EMT marker E-cadherin was inhibited and N-cadherin and vimentin were enhanced when Git2 was over-expressed in 168FARN cells and 4TO7 cells expressing low level of Git2, whereas the expression of E-cadherin was increased and N-cadherin and vimentin
A detailed study on electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy is presented. There are two distinctive regions with non-homogeneous electrical and optical ...properties in N-face of GaN revealed by wet etching, Raman and cathodoluminescence. One region exclusively exhibited stronger donor–acceptor pair emission and higher carrier concentration due to impurity incorporation. A strong red-shift of near band edge emission of ∼24meV was also observed owing to additional carrier concentration. Furthermore, the activation energy difference of the etching process between the two regions is ∼0.12eV. The distinctive etching topography was probably due to the difference of surface potentials related to the level of carrier concentration in GaN.
•We revealed two distinctive regions in N-polar face GaN by the wet etching method.•The two regions show very different densities and sizes of dodecagonal pyramids.•The two regions show non-homogeneous electrical and optical properties.•Surface potentials related to the level of carrier concentration in GaN were studied using Kelvin Probe Force Microscopy.
•The planar-gate surface-conduction electron source has been fabricated.•ZnO nanorods deposited on the cathode are used as field emission emitters.•ZnO nanorods deposited in the C–G gap are used as ...surface conduction emitters.•High electron emission efficiency is obtained at low gate voltage.•The fabricated electron source has an efficient field emission property.
A planar-gate surface-conduction electron source with ZnO nanorods has been successfully fabricated, where ZnO nanorods deposited on the cathode are used as field emission emitters and ZnO nanorods deposited in the gap between cathode and gate electrode (C–G gap) are used as surface-conduction emitters. Field emission investigations indicate that the turn-on voltage at emission current of 10μA is approximately 85V. The emission current and conduction current reach to 520V and 450V at the gate voltage and anode voltage of 140V and 2000V, respectively. High electron emission efficiency (56.2%) is obtained at low gate voltage of 140V. The maximum brightness can reach 1200cd/m2 and the emission current fluctuation is smaller than 5% for 6h. These results indicate that the electron source based on the planar-gate surface-conduction triode with ZnO emitters has efficient field emission characteristics.
PDF
