Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK Italy and IMB-CNM (Spain) have been tested before and after ...proton-irradiation to an equivalent fluence of about 1 × 1016≠cm-2 (1MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensors after high energy proton irradiation, demonstrating the excellent radiation tolerance of the 3D pixel sensors. Thus, they will be excellent candidates for the extreme radiation environment at the innermost layers of the HL-LHC experiments.
Results of an extensive R&D program aiming at radiation hard, small pitch, 3D pixel sensors are reported. The CMS experiment is supporting this R&D in the scope of the Inner Tracker upgrade for the ...High Luminosity phase of the CERN Large Hadron Collider (HL-LHC). In the HL-LHC the Inner Tracker will have to withstand an integrated fluence up to 2.3×1016neq/cm2. A small number of 3D sensors were interconnected with the RD53A readout chip, which is the first prototype of 65 nm CMOS pixel readout chip designed for the HL-LHC pixel trackers. In this paper results obtained in beam tests before and after irradiation are reported. The irradiation of a single chip module was performed up to a maximum equivalent fluence of about 1×1016neq/cm2. The analysis of the collected data shows excellent performance: the spatial resolution in not irradiated sensors can reach about 3 to 5 μm, for inclined tracks, depending on the pixel pitch. The measured hit detection efficiencies are close to 99% measured both before and after the above mentioned irradiation fluence.
The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few ...1016neq/cm2 at ∼3cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n+ on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is 100μm or 130μm, that of 3D sensors 130μm. First prototypes of hybrid modules, bump-bonded to the present CMS readout chips (PSI46 digital), have been characterized in beam tests. First results on their performance before and after irradiation up to a maximum fluence of ∼5×1015neq/cm2 are reported in this article.
The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few 1 0 16 n ...eq /cm 2 at ~ 3 cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n + on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is 100 μ m or 130 μ m , that of 3D sensors 130 μ m . First prototypes of hybrid modules, bump-bonded to the present CMS readout chips (PSI46 digital), have been characterized in beam tests. Finally, first results on their performance before and after irradiation up to a maximum fluence of ~ 5 × 1 0 15 n eq /cm 2 are reported in this article.
The High Luminosity upgrade of the CERN-LHC (HL-LHC) demands for a new high-radiation tolerant solid- state pixel sensor capable of surviving fluencies up to a few 10 16 particles cm 2 at ∼3 cm from ...the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R & D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100µm and 130µm active thickness for planar sensors, and 130µm for 3D sensors, the thinnest ones ever produced so far. First prototypes of hybrid modules bump-bonded to the present CMS readout chips have been tested in beam tests. Preliminary results on their performance before and after irradiation are presented.
The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands a new high-radiation–tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10$^{16} n_{eq}/\mathrm{cm}^2$ ...at ~ 3 cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin n-in-p–type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 μm and 130 μm active thickness for planar sensors, and 130 μm for 3D sensors, the thinnest ones ever produced so far. The first prototypes of hybrid modules, bump-bonded to the present CMS readout chip, have been tested on beam. The first results on their performance before and after irradiation are presented
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