For the detection of secondary vertices of long lived particles containing bottom and charm quarks at the International Linear Collider (ILC), a DEPFET pixel detector is one of the technologically ...favored options. In a DEPFET sensor a MOSFET pixel detector is integrated on a sidewards depleted silicon bulk sensor, thus combining the advantages of a fully depleted silicon sensor with in-pixel amplification. DEPFET pixel matrices have been characterized in a high energy particle beam. Since the DEPFET is a very high precision device, given its large S/N (> 100) and small pixel size (36 × 22 ¿m 2 ), a DEPFET based pixel telescope consisting of 5 DEPFETs has been developed. The uncertainty on the predicted position for a device under test (DUT) positioned inside the telescope was found to be 1.4 ¿m with the existing device, due to the limited performance of two of the five DEPFET planes. A DEPFET telescope built of 5 modules equivalent to the best plane presented here, would have a track extrapolation error as low as 0.65 ¿m at the DUT plane.
For the detection of secondary vertices of long lived bottom and charm quarks at the proposed International Linear Collider (ILC) a DEPFET pixel detector is one of the favored technology options. ...DEPFET pixel sensors, in which the amplifying transistor structure is contained in the pixel cell itself on a fully depleted bulk, are unique devices in terms of their large signal and low noise capability and their obtainable spatial resolution with very thin detectors. DEPFET pixel prototype modules with close to ILC specifications have been tested in the laboratory and, for the first time, in a 6 GeV electron test beam. The different noise sources have been calculated and compared with the measured value of ENC/spl ap/225 e/sup -/ for the entire readout chain.
For the detection of secondary vertices of long lived bottom and charm quarks at the proposed International Linear Collider (ILC) a DEPFET pixel detector is one of the technologically favored ...options. DEPFET pixel sensors, in which the amplifying transistor structure is contained in the pixel cell itself on a fully depleted bulk, are unique devices in terms of their large signal and low noise capability and their obtainable spatial resolution with very thin detectors. DEPFET pixel prototype modules with close to ILC specifications have been tested in the laboratory and, for the first time, in a 6 GeV electron test beam. The different noise sources have been calculated and compared with the measured value of ENC/spl ap/225 e/sup -/ for the entire system.
A new generation of MOS-type DEPFET active pixel sensors in double metal/double poly technology with /spl sim/25 /spl mu/m pixel size has been developed to meet the requirements of the vertex ...detector at the ILC (International Linear Collider). The paper presents the design and technology of the new linear MOS-type DEPFET sensors including a module concept and results of a feasibility study on how to build ultra-thin fully depleted sensors. One of the major challenges at the ILC is the dominant e/sup +/e/sup -/ pair background from beam-beam interactions. The resulting high occupancy in the first layer of the vertex detector can be reduced by an extremely fast read out of the pixel arrays but the pair-produced electrons will also damage the sensor by ionization. Like all MOS devices, the DEPFET is inherently susceptible to ionizing radiation. The predominant effect of this kind of irradiation is the shift of the threshold voltage to more negative values due to the build up of positive oxide charges. The paper presents the first results of the irradiation of such devices with hard X-rays and gamma rays from a /sup 60/Co source up to 1 Mrad(Si) under various biasing conditions.
DEPFET, a monolithic active pixel sensor for the ILC Velthuis, J.J.; Kohrs, R.; Mathes, M. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2007, Letnik:
579, Številka:
2
Journal Article
Recenzirano
In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, thereby combining the advantages of a fully depleted silicon sensor with ...in-pixel amplification. A 450
μm thick DEPFET was tested in a testbeam. The
S/
N was found to be larger than 110. The position resolution is better than 5
μm. At a seed cut of 7
σ, the efficiency and purity are both close to 100%. In the readout chip a zero-suppression capability is implemented. The functionality was demonstrated using a radio-active source. The predicted impact parameter resolution of a 50
μm thick DEPFET vertex detector, is much better than required for the International Linear Collider (ILC).
First test beam results on DEPFET pixels for the ILC Kohrs, R.; Reuen, L.; Andricek, L. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2006, Letnik:
565, Številka:
1
Journal Article
Recenzirano
By incorporating a field effect transistor into a fully depleted sensor substrate the DEPFET sensor combines radiation detection and amplification in each pixel, resulting in very low noise and high ...spatial resolution. This makes DEPFET sensors a favorable technology for the vertex detector at the planned International Linear Collider (ILC). A prototype system with fast steering chips, a current-based readout chip and a
64
×
128
pixels DEPFET matrix has been built and was operated successfully in the DESY test beam. First results of the studies on two different DEPFET design options are presented in this paper.
Status of DEPFET Velthuis, J.J.; Kohrs, R.; Reuen, L. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
12/2006, Letnik:
569, Številka:
1
Journal Article
Recenzirano
In a DEPFET sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, therefore combining the advantages of a fully depleted silicon sensor with in-pixel amplification. ...Presently, the DEPFET is mainly developed for two different kinds of applications: imaging spectroscopy in X-ray astronomy and the vertex detector for the International Linear Collider (ILC). In X-ray astronomy, the DEPFET sensor is chosen as focal plane detector for the XEUS mission mainly for its low noise and power consumption. In addition, the scalable pixel size makes it suitable for missions like SIMBOL-X, BepiColombo and WIMS. Using the source follower readout mode, a noise of 1.6e
− is obtained at room temperature for single pixel devices. Two types of ILC devices, with and without a high energy (HE) implant, were tested in a testbeam. The signal-to-noise ratios were 100 with and 126 without HE implant. The position resolutions for both devices were found to be better than 6
μm.
The power supply system of the CLEO III silicon detector von Toerne, E; Burns, J; Duboscq, J ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
04/2002, Letnik:
481, Številka:
1
Journal Article
Recenzirano
Odprti dostop
The CLEO III detector has recently commenced data taking at the Cornell Electron Storage Ring (CESR). One important component of this detector is a four layer double-sided silicon tracker with 93% ...solid angle coverage. This detector ranges in size and number of readout channels between the LEP and LHC silicon detectors. In order to reach the detector performance goals of signal-to-noise ratios greater than
15
:
1
low noise front-end electronics together with highly regulated low noise power supplies were used. In this paper, we describe the low-noise power supply system and associated monitoring and safety features used by the CLEO III silicon tracker.
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