Undoped and In doped ZnO films have been deposited by sol–gel spin coating method. The effect of indium incorporation on structural and optical properties of ZnO films has been investigated. X-ray ...diffraction patterns of the films showed the hexagonal wurtzite type polycrystalline structure and that indium incorporation leads to substantial changes in the structural characteristics of ZnO films. The SEM and AFM measurements showed that the surface morphology of the films was affected from the indium incorporation. Optical reflectance and transmittance were recorded with a double beam spectrophotometer with an integrating sphere. The optical band gap of these films was determined. The absorption edge shifted to the lower energy depending on the dopant materials. The optical constants of these films were determined using transmittance and reflectance spectra.
We have studied low refractive index fluorine doped silica thin films prepared by reactive magnetron sputtering. Two experimental parameters were varied to increase the porosity of the films, the ...geometry of the deposition process (i.e., the use of glancing angle deposition) and the presence of chemical etching agents (fluorine species) at the plasma discharge during film growth. The microstructure, chemistry, optical properties, and porosity of the films have been characterized by scanning electron and atomic force microscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, UV–vis, and spectroscopic ellipsometry. It is found that either the deposition at glancing angles or the incorporation of CFx species in the plasma discharge during film growth produces a decrease in the refractive index of the deposited films. The combined effect of the two experimental approaches further enhances the porosity of the films. Finally, the films prepared in a glancing geometry exhibit negative uniaxial birefringence.
•SiOF thin films with controlled porosity prepared by reactive magnetron sputtering•Incorporation of CFx precursors in the plasma discharge enhances film porosity.•Deposition at glancing geometries further increases void fraction within the films
Ernst Lubitsch, the German film director who left Berlin for Hollywood in 1923, is best remembered for the famous "Lubitsch touch" in such masterpieces as Trouble in Paradise and Ninotchka, featuring ...Greta Garbo. Kristin Thompson's study focuses on Lubitsch's silent films from the years between 1918 and 1927, tracing the impact this director had on consolidating classical Hollywood filmmaking. She gives a new assessment of the stylistic two-way traffic between the American and the German film industries, after World War I each other's strongest rival in Europe. By 1919, Lubitsch had emerged as the finest proponent of the German studio style: sophisticated, urbane and thoroughly professionalized. He was quick to absorb 'American' innovations and stylistic traits, becoming the unique master of both systems and contributing to the golden ages of the American as well as the German cinema. Utilizing Lubitsch's silent films as a key to two great national cinemas, Thompson's meticulously illustrated and extensively researched book goes beyond an authorial study and breaks new ground in cinema history.
Traces the dynamic relationship between film and city
How are the political possibilities of film related to urban space? What are the ethical implications of representing urban space on film? How ...does the use of urban space help to theorise film?
Film and Urban Space: Critical Possibilitiestraces recurring debates about what constitutes film's political potential and argues that the relation between film and urban space has been crucial to these debates and their historical transformations. The book demonstrates that in the attempt to follow certain prescriptions - shooting on location, disrupting normalizing time, experimenting with memory, interlinking the spaces of screen and cinema - films invariably use the relation between film and urban space as a kind of laboratory, testing anew received prescriptions but invariably encountering new opportunities and new limits. A wide range of key films, from Dziga Vertov's 1929Man with a Movie Camerato Jia Zhangke's 200824 City, are discussed in depth, each offering an argument for how the encounter between specific manifestations of modern urban space and politically engaged film strategies has served to challenge the status quo and stimulate critical thinking.
An insightful and thought-provoking read, Film and Urban Space: Critical Possibilities presents scholars and advanced students in Film Studies with a compelling argument for the impact of urban space in creating film's critical political and ethical possibilities.
Nancy Meyers is acknowledged as the most commercially successful woman filmmaker of all time, described by Daphne Merkin in The New York Times on the release of It’s Complicated as ‘a singular figure ...in Hollywood – she may, in fact, be the most powerful female writer-director-producer currently working’. Yet Meyers remains a director who, alongside being widely dismissed by critics, has been largely absent in scholarly accounts both of contemporary Hollywood cinema, and of feminism and film. Despite Meyers’ impressive track record for turning a profit (including the biggest box-office return ever achieved by a woman filmmaker at that time for What Women Want in 2000), and a multifaceted career as a writer/producer/director dating back to her co-writing Private Benjamin in 1980, Meyers has been oddly neglected by Film Studies to date. Including Nancy Meyers in the Bloomsbury Companions to Contemporary Filmmakers rectifies this omission, giving her the kind of detailed consideration and recognition she warrants and exploring how, notwithstanding the challenges authorship holds for feminist film studies, Meyers can be situated as a skilled ‘auteur’. This book proposes that Meyers’ box-office success, the consistency of style and theme across her films, and the breadth of her body of work as a writer/producer/director across more than three decades at the forefront of Hollywood (thus importantly bridging the second/third waves of feminism) make her a key contemporary US filmmaker. Structured to meet the needs of both the student and scholar, Jermyn's volume situates Meyers within this historical and critical context, exploring the distinctive qualities of her body of work, the reasons behind the pervasive resistance to it and new ways of understanding her films.
We report a two-step growth process for the fabrication of (222)-plane textured indium tin oxide (ITO) films. A thin ITO seed layer was grown in mixed Argon+Oxygen gases, followed by a thick ITO ...deposited in Argon gas. X-Ray diffraction shows that the sputtered ITO films exhibit strongly preferred (222) crystalline orientation. The (222)-plane textured ITO films have high transmittance above 80% in the visible range and carrier concentration, mobility and resistivity in the range of 1021cm−3, 40cm2/Vs and 10−4Ω·cm, respectively. The surface roughness of our (222) textured ITO films is 1.4nm, which is one of the smallest value obtained from sputtered ITO thin films.
•Control of preferred (222) crystalline orientation of indium tin oxide (ITO) films•A thin oxygen rich seed layer activates (222) orientation growth of overhead ITO films.•The surface roughness of (222)-plane textured ITO films is about 1.4nm.•Carrier concentration and resistivity are about 1021cm−3 and 10−4Ω·cm, respectively.
Thin films of undoped, fluorine- and antimony-doped tin oxide on glass at 400
°C was prepared by spray pyrolysis technique. Tin chloride (SnCl
2), ammonium fluoride (NH
4F), and antimony trichloride ...(SbCl
3) were used as source for tin (Sn), fluorine (F), and antimony (Sb), respectively. To ensure the control of solution concentration on growth rate, fluorine-doped tin oxide (SnO
2:F) thin films were first prepared with different amount of tin precursor, in the range of 5–12
g, which has resulted in deposition of films with different thickness values. The optimum amount of tin precursor found from this study (11
g) was fixed constant for preparing SnO
2 films with different doping levels of F and Sb. From the X-ray diffraction analyses, it is understood that the preferred orientation of SnO
2:F films is dependent on their thickness and the solution concentration. The variation in the solution concentration and orientation of the films was reflected in their morphology as examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). SEM studies showed that the variation in the solution concentration lead to different grain shapes for different orientations. The AFM study showed that the RMS roughness of undoped films reduced considerably from 86 to 24
nm due to fluorine doping (15
wt.%), whereas the antimony doping (2
wt.%) has no significance effect on RMS roughness (93
nm). The electrical properties of the films were examined by a Hall measurements setup in van der Pauw configuration. A minimum sheet resistance of 1.75 and 2.17
Ω/
▪ were obtained for F and Sb doped films, respectively. From the optical studies, it is found that the transmittance of undoped films increased from 42% to a maximum 85% on 30
wt.% fluorine doping, whereas that has been decreased to a minimum of 12% on 4
wt.% antimony doping (800
nm). A discussion on the effect of type of dopants and their concentration on the structural, electrical and optical properties of the SnO
2 film have been presented.
Flexible and transparent polymeric “superbarrier” packaging materials have become increasingly important in recent years. Layer-by-layer assembly offers a facile technique for the fabrication of ...layered, polymer−clay superbarrier thin films. At only 51 nm thick, these nanocomposite thin films, comprised of 12 polymer and 4 clay layers, exhibit an oxygen permeability orders of magnitude lower than EVOH and SiO x . Coupling high flexibility, transparency, and barrier protection, these films are good candidates for a variety packaging applications.
In this study, CuFeO2 thin films were deposited onto quartz substrates using a sol–gel and a two-step annealing process. The sol–gel-derived films were annealed at 500°C for 1h in air and then ...annealed at 600 to 800°C for 2h in N2. X-ray diffraction patterns showed that the annealed sol–gel-derived films were CuO and CuFe2O4 phases in air annealing. When the films were annealed at 600°C in N2, an additional CuFeO2 phase was detected. As the annealing temperature increased above 650°C in N2, a single CuFeO2 phase was obtained. The binding energies of Cu-2p3/2, Fe-2p3/2, and O-1s were 932.5±0.1eV, 710.3±0.2eV and 530.0±0.1eV for CuFeO2 thin films. The chemical composition of CuFeO2 thin films was close to its stoichiometry, which was determined by X-ray photoelectron spectroscopy. Thermodynamic calculations can explain the formation of the CuFeO2 phase in this study. The optical bandgap of the CuFeO2 thin films was 3.05eV, which is invariant with the annealing temperature in N2. The p-type characteristics of CuFeO2 thin films were confirmed by positive Hall coefficients and Seebeck coefficients. The electrical conductivities of CuFeO2 thin films were 0.28Scm−1 and 0.36Scm−1 during annealing at 650°C and 700°C, respectively, in N2. The corresponding carrier concentrations were 1.2×1018cm−3 (650°C) and 5.3×1018cm−3 (700°C). The activation energies for hole conduction were 140meV (650°C) and 110meV (700°C). These results demonstrate that sol–gel processing is a feasible preparation method for delafossite CuFeO2 thin films.
► CuFeO2 films were prepared by sol–gel processing followed a two-step annealing. ► Pure delafossite CuFeO2 films can be obtained above 650°C. ► Electrical conductivity of the CuFeO2 film annealed at 700°C is 0.36Scm−1.
▸ ZAO films were prepared by DC reactive magnetron sputtering method by two individual high purity metallic targets of Zn and Al. ▸ Sputtering deposition conditions were optimized to exhibit a good ...surface roughness for light scattering and low resistivities. ▸ A low resistivity of 2.18×10−4Ωcm and mobility of 46cm2V−1s−1 obtained for ZAO film annealed at 400°C.
In the present study transparent conducting zinc aluminum oxide (ZAO) thin films were prepared by DC reactive magnetron sputtering technique. The films were deposited on glass substrates at 200°C and annealed from 200°C to 500°C. XRD patterns of ZAO films shows (002) diffraction peak of hexagonal wurtzite, meaning that the films have c-axis orientation perpendicular to the substrate. Crystallite size was calculated from X-ray diffraction (XRD) spectra using the Scherrer formula. The surface morphology of the films was observed by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The electrical conductivity increases with increase of annealing temperature. The activation energies of conduction were obtained from an Arrhenius equation. The best characteristics of ZAO films have been obtained for the films annealed at 400°C with an average transmittance of 88% and a minimum resistivity of 2.2×10−4Ωcm. The optical band gap, optical constants, and electron concentrations of ZAO films are obtained from UV–vis–IR spectrophotometer data.
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