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11.	Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs Chan, C.T.; Tang, C.J.; Kuo, C.H. ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005 Conference Proceeding A novel method for characterizing MOSFET with HfSiON high-k gate dielectric is demonstrated for the first time by direct measurement of single-electron de-trapping. Individual high-k trapped electron ...	Celotno besedilo
12.	Quantum Tunneling of Magnetization in Molecular Complexes with Large Spins – Effect of the Environment Book Chapter Odprti dostop	Celotno besedilo PDF
13.	Quantum Tunneling of Magnetization in Molecular Complexes with Large Spins – Effect of the Environment Book Chapter Odprti dostop	Celotno besedilo PDF

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