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Kim, M; Xu, S G; Berdyugin, A I; Principi, A; Slizovskiy, S; Xin, N; Kumaravadivel, P; Kuang, W; Hamer, M; Krishna Kumar, R; Gorbachev, R V; Watanabe, K; Taniguchi, T; Grigorieva, I V; Fal'ko, V I; Polini, M; Geim, A K
Nature communications, 2020-May-11, Letnik: 11, Številka: 1Journal Article
Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measure the electron-electron scattering length in graphene and report qualitative deviations from the standard behavior. The changes induced by screening become important only at gate dielectric thicknesses of a few nm, much smaller than a typical separation between electrons. Our theoretical analysis agrees well with the scattering rates extracted from measurements of electron viscosity in monolayer graphene and of umklapp electron-electron scattering in graphene superlattices. The results provide a guidance for future attempts to achieve proximity screening of many-body phenomena in two-dimensional systems.
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