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Varonen, Mikko; Samoska, Lorene; Fung, Andy; Padmanabhan, Sharmila; Kangaslahti, Pekka; Lai, Richard; Sarkozy, Stephen; Soria, Mary; Owen, Heather; Reck, Theodore; Chattopadhyay, Goutam; Larkoski, Patricia V.; Gaier, Todd
IEEE microwave and wireless components letters, 01/2015, Letnik: 25, Številka: 1Journal Article
In this letter we report an ultra-low-noise amplifier module chain in the WR4 frequency range. The amplifier chips were fabricated in a 35 nm InP HEMT technology and packaged in waveguide housings utilizing quartz E-plane waveguide probes. When cryogenically cooled to 22 K and measured through a mylar vacuum window, the amplifier module chain achieves a receiver noise temperature of 87 K at 228 GHz and less than a 100 K noise temperature from 217 to 236 GHz. The LNA modules have 21-31 dB gain and the power dissipation is 12.4-15.8 mW. To the best of authors' knowledge, these are the lowest LNA noise temperatures at these frequencies reported to date.
