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Li, Xufan; Lin, Ming-Wei; Basile, Leonardo; Hus, Saban M; Puretzky, Alexander A; Lee, Jaekwang; Kuo, Yen-Chien; Chang, Lo-Yueh; Wang, Kai; Idrobo, Juan C; Li, An-Ping; Chen, Chia-Hao; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai
Advanced materials (Weinheim) 28, Številka: 37Journal Article
Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe is converted to nondegenerate p-type monolayer Mo W Se through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo W Se appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W-rich" regions in the lattice.
