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Jia Feng; Loke, A. L. S.; Tin Tin Wee; Lackey, C. O.; Okada, L. A.; Schwan, C. T.; Mantei, T.; Morgan, J. H.; Herden, M. M.; Cooper, J. G.; Zhi-Yuan Wu; Jung-Suk Goo; Xin Li; Icel, A. B.; Bair, L. A.; Fischette, D. M.; Doyle, B. A.; Fang, E. S.; Leary, B. M.; Krishnan, S.
2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011-JuneConference Proceeding
We present device and circuit characterization resulting from technology/design co-development to improve the design and manufacture of analog/mixed-signal (AMS) circuits in processors. We introduce I D -based MOSFET transconductance measurements and a new measurement of drain saturation margin at realistic analog biasing. We also describe routinely monitored scribe lane replicas of key AMS passives and circuits. Such measurements enable construction and validation of compact models better suited to AMS needs than those historically tailored for logic design.
