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  • First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
    Yu, X.-R.; Chang, W.-H; Hong, T.-C.; Sung, P.-J.; Agarwal, A.; Luo, G.-L.; Wu, C.-T.; Kao, K.-H.; Su, C.-J.; Chang, S.-W.; Lu, W.-H.; Fu, P.-Y.; Lin, J.-H.; Wu, P.-H.; Cho, T.-C.; Ma, W. C.-Yu; Lu, D.-D.; Chao, T.-S.; Maeda, T.; Lee, Y.-J.; Wu, W.-F.; Yeh, W.-K.; Wang, Y.-H.

    2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022-June-12
    Conference Proceeding

    To solve the mobility balance issue in nanosheet FETs (NSFETs) and complementary FETs (CFETs), the aggressive approach using hetero-oriented integration with Ge channels was demonstrated by low temperature hetero-layer bonding technology (LT-HBT). Good manufacturability of the hetero-oriented Ge platform was verified with XRD 2θ-ω scan, Raman spectra, Selected Area Diffraction (SAD), and Converged Beam Electron Diffraction (CBED). Balanced device performance in terms of C-V, I D -V G , I D -V D and ρ c for Ge (111) nFET and Ge (100) pFET was achieved, leading to better VTCs and voltage gains.

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