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Yu, R.R.; Liu, F.; Polastre, R.J.; Chen, K.-N.; Liu, X.H.; Shi, L.; Perfecto, E.D.; Klymko, N.R.; Chace, M.S.; Shaw, T.M.; Dimilia, D.; Kinser, E.R.; Young, A.M.; Purushothaman, S.; Koester, S.J.; Haensch, W.
2009 Symposium on VLSI Technology, 2009-JuneConference Proceeding
A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI applications.
