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Shimanskii, A. F.; Pavlyuk, T. O.; Kopytkova, S. A.; Filatov, R. A.; Gorodishcheva, A. N.
Semiconductors (Woodbury, N.Y.), 02/2018, Letnik: 52, Številka: 2Journal Article
Homogeneous Sb-doped single crystals of Ge–Si solid solutions are grown with a silicon content of 0.2 to 0.8 at %. The optical absorption of single crystals with a resistivity of (2–3) Ω cm is studied by IR Fourier spectroscopy at a wavelength of 10.6 μm in the temperature range from 25 to 60°C. It is found that the introduction of silicon into antimony-doped germanium improves the temperature stability of the optical properties of the crystals.
