Relaxor-ferroelectrics as a complex member of perovskites provide a set of advantages compared to the classical capacitor materials. These are low hysteresis losses, slight temperature dependence of the permittivity and high permittivities even for grain sizes smaller than 1 w m. Barium-titanate-zirconate (BTZ), Ba(Ti 1 m x ,Zr x )O 3 samples were prepared in two different ways: the mixed-oxide route was used for conventional bulk ceramics and the thin films were grown by chemical solution deposition (CSD) on Pt-coated Si-Wafer. The samples were prepared with a Mn content of 1at% to decrease the leakage current and increase the lifetime. Ti was subsequently substituted by Zr contents (10at%, 20at%, 30at% and 40at%). The microstructure was investigated by X-ray and SEM. For electrical characterization C(V), hysteresis and impedance measurements were performed. With increasing Zr content the permittivity decreases and the hysteresis loop becomes smaller.