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Jackson, E.M.; Aifer, E.H.; Canedy, C.L.; Nolde, J.A.; Cress, C.D.; Weaver, B.D.; Vurgaftman, I.; Warner, J.H.; Meyer, J.R.; Tischler, J.G.; Shaw, S.A.; Dedianous, C.R.
Journal of electronic materials, 07/2010, Letnik: 39, Številka: 7Journal Article
The effects of 2 MeV proton irradiation on a set of four long-wave infrared type II superlattice photodiodes with various structures were studied. Changes were monitored in operating bias, quantum efficiency (QE), and dark current. Shifts in operating bias indicate that irradiation causes the superlattices to become more p -type, and decreases in QE are found to be consistent with a reduction in carrier lifetime. Leakage currents remain lower in graded-gap diodes at all fluences.
