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Cançado, L. G; Jorio, A; Ferreira, E. H. Martins; Stavale, F; Achete, C. A; Capaz, R. B; Moutinho, M. V. O; Lombardo, A; Kulmala, T. S; Ferrari, A. C
Nano letters, 08/2011, Letnik: 11, Številka: 8Journal Article
We present a Raman study of Ar+-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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