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Derbin, A. V.; Drachnev, I. S.; Kayunov, A. S.; Muratova, V. N.
JETP letters, 06/2012, Letnik: 95, Številka: 7Journal Article
The axio-electric effect in silicon atoms is sought for solar axions appearing owing to bremsstrahlung and the Compton process. Axions are detected using a Si(Li) detector placed in a low-background setup. As a result, a model-independent constraint on the axion-electron coupling constant | g Ae | ≤ 2.2 × 10 −10 has been obtained, which leads to the bounds m A ≤ 7.9 eV and m A ≤ 1.4 eV (at 90% C.L.) for the mass of the axion in the DFSZ and KSVZ models, respectively.
