High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. •High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland).•HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN).•Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips.•The time resolution measured in the beam tests is nearly 100ns.•We plan to improve time resolution and efficiency by using high-resistive substrate.