We have designed several ASICs for possible applications in a new ATLAS pixel layer for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL, a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock, and a clock multiplier to produce a higher frequency clock to serialize the data for transmission. These chips were designed using a 130nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated chips and the submission has been mostly successful. We irradiated the chips with 24GeV/c protons at CERN to a dosage of 70Mrad. We observed no significant degradation except the driver circuit in the VCSEL driver fabricated using the thick oxide process in order to provide sufficient voltage to drive a VCSEL. The degradation is due to the radiation induced large threshold shifts in the PMOS transistors used.