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Ventrice, D.; Fantini, P.; Redaelli, A.; Pirovano, A.; Benvenuti, A.; Pellizzer, F.
IEEE electron device letters, 11/2007, Letnik: 28, Številka: 11Journal Article
In this letter, we show a compact model that describes the main electrical features of phase change memory (PCM) devices. The model coherently reproduces the behavior of both SET and RESET states with the description of the physics of involved phenomena for different bias and temperature conditions. For arbitrary programming pulses, the model is able to generate intermediate states with mixed phase distributions and, thus, with resistance values between the SET and RESET ones. The proposed model is therefore a precious tool for the design of multilevel PCM applications.
