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  • Observation of order-disord...
    OURMAZD, A; BEAN, J. C

    Physical review letters, 1985-Aug-12, Letnik: 55, Številka: 7
    Journal Article

    The observation of an order-disorder transition in the semiconductor strained-superlattice system GeSi/Si, which doubles the lattice periodicity in a 111 line type direction, is reported. This phenomenon may be representative of a class of order-disorder transitions in strained-semiconductor systems, even when the lattice mismatch is small.