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Wagatsuma, Youya; Alam, Md. Mahfuz; Okada, Kazuya; Yamada, Michihiro; Hamaya, Kohei; Sawano, Kentarou
Applied physics express, 02/2021, Letnik: 14, Številka: 2Journal Article
We demonstrate that the critical thickness for Ge-rich strained SiGe layers can be drastically increased by a factor of more then two by means of growth on mesa-patterned Ge-on-Si. The Si0.2Ge0.8 layer grown on sub-millimeter mesa Ge-on-Si is fully strained and free from ridge roughness, while the same Si0.2Ge0.8 layers grown on unpatterned Ge-on-Si and a Ge substrate are partially strain-relaxed with the surface covered by high-density ridge roughness. This demonstrates that the proposed patterning method can provide thick and stable strained SiGe films as promising templates for realization of strained SiGe-based optoelectronic and spintronic devices.
