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Kasim, Nabihah; Hassan, Zainuriah; Lim, Way Foong; Quah, Hock Jin
Journal of materials science. Materials in electronics, 06/2020, Letnik: 31, Številka: 12Journal Article
Influence of annealing temperature on the properties of In 2 Ga 2 ZnO 7 (IGZO) thin film prepared using sol–gel method was extensively studied. Annealing treatment at four different temperatures (300, 500, 700 and 900 °C) has transformed the amorphous IGZO to polycrystalline IGZO. The increase in annealing temperature to 900 °C encouraged the formation of interfacial layer on the underlying Si substrate. As a result, a decrement in film current conductivity was perceived and the sample annealed at 900 °C was determined as the closest to having insulating properties. More characterization regarding the structural, morphological and optical characteristics of the annealed films was discussed in this study.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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