The Aurivillus phase ferroelectric ceramic material BaBi4Ti4O15 (BBT) is considered as an attractive material for ferroelectric and piezoelectric applications because of its high transition temperature, high thermal stability and high dielectric constant. Here, the Dy dopped BBT ceramic has been proposed by synthesizing via cost-effective solid-state reaction route. The synthesized material crystalizes in the orthorhombic phase with space group A21am. The article reveals the synthesis methodology and characterization of material for application in piezoelectric transducers, sensors, ferroelectric non-volatile memories (Fe-RAM), etc. The article shows the investigation phase study by x-ray diffraction method, surface morphology, and electrical behavior of Dy dopped BBT ceramic material. The surface morphology shows irregular shape, size and orientation of well-defined grains. The room temperature dielectric constant abruptly decreases from 141 to 6 with the substation of 10 % Dy in BBT. The temperature coefficient TKε′ is observed below 0.02 up to x = 0.30 with a slight increase to 0.20 for x = 0.40. Each composition also shows a diffused phase transition behavior with a diffusion coefficient γ between 1 and 2. The influence of the Dy additive on the degree of diffuseness of the BDBT dielectric constant was investigated using a modified Curie-Weiss law. The Curie temperature was found to be 416 °C at 10 kHz frequency for BBT, which increases up to 579 °C with addition of 40 % Dy. The energy storage efficiency % increases from 27.64 % for x = 0.00–97.16 % for x = 0.00. Display omitted