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Kada, W.; Kambayashi, Y.; Ando, Y.; Onoda, S.; Umezawa, H.; Mokuno, Y.; Shikata, S.; Makino, T.; Koka, M.; Hanaizumi, O.; Kamiya, T.; Ohshima, T.
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 04/2016, Letnik: 372Journal Article
To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5MeV alpha particles and 9MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35eV and 0.43eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.
