We examine the effect of resonant absorption of electromagnetic signals in a silicon semiconductor plasma layer when the dielectric plate is placed behind it both experimentally and numerically. It is shown that such plate acts as a dielectric resonator and can significantly increase the electromagnetic energy absorption in the semiconductor for certain frequencies determined by the dielectric plate parameters. Numerical modelling of the effect is performed under the conditions of conducted experiment. The numerical results are found to be in qualitative agreement with experimental ones. This study confirms the proposed earlier method of increasing the efficiency of bolometric-type detectors of electromagnetic radiation.