Silicon is a promising photocathode material in photoelectrochemical water splitting for hydrogen production, but it is primarily limited by photocorrosion in aqueous electrolytes. As an extensively used protective material, crystalline TiO2 could protect Si photoelectrode against corrosion. However, a large number of grain boundaries (GBs) in polycrystalline TiO2 would induce excessive recombination centers, impeding the carrier transport. This paper describes the introduction of oxygen vacancies (Ovac) with controllable spatial distribution for GBs to promote carrier transport. Two kinds of Ovac distribution, Ovac along GBs and Ovac inside grains, are compared, where the latter one is demonstrated to facilitate carrier transport owing to the formation of tunneling paths across GBs. Consequently, a simple p‐Si/TiO2/Pt heterojunction photocathode with controllable Ovac distribution in TiO2 shows a +400 mV onset potential shift and yields an applied bias photon‐to‐current efficiency of 5.9 %, which is the best efficiency reported among silicon photocathodes except for silicon homojunction. This communication describes the carrier transport mechanism employing conductive atomic force microscopy (c‐AFM) by controlling the oxygen vacancies (Ovac) distribution for grain boundaries (GBs) in crystalline TiO2. Compared to Ovac distributed along the GBs, the Ovac inside the grains could narrow the depletion layer in grain‐GB‐grain junction to facilitate electron tunneling across GBs, improving the electron collection at the photoelectrode surface.