E-viri
Recenzirano
-
Wai, Wan Tatt
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2023-May-1Conference Proceeding
Carbon contaminations on surface & sub-surface of silicon (Si) are characterized using Auger method. The surface carbon atomic % on Si of post treatment with H 3 PO 4 (for nitride etch), BOE (buffer HF for oxide etch) & SC1 (standard clean for organic removal) is 4.0%, 6.0% & 1.7% respectively, with significantly higher for sample of post BOE. BOE chemicals of fresh, mid-processing & end-processing baths were sampled for gas chromatography-mass spectrometry (GC-MS) analysis where significant amount of cyclopentasiloxane & benzene were detected using hexane extraction. Cyclopentatsiloxane & benzene level was reduced from 1.7 x 10 5 to 0.45 x 10 5 & 0.7 x 10 5 to 0.4 x 10 5 count per second (cps) respectively, from fresh to end-processing chemicals. This indicates that the organic impurities in the solution might have been adsorbed or incorporated into the Si layers during oxide etching process. Auger & GC-MS proved to be efficient in monitoring & controlling of organic impurities in semiconductor process.
Avtor
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.