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  • Effect of protrusions in HV...
    Gutierrez, S.; Sancho, I.; Fontan, L.; De No, J.

    IEEE transactions on dielectrics and electrical insulation, 10/2012, Letnik: 19, Številka: 5
    Journal Article

    This paper presents an analysis to determine the effect of the stress enhancement factor due to the presence of protrusions in the semiconductor shields of HVDC cables. The theoretical analysis of the electric field containing protrusions is based on a harmonic solution for the electric field for spherical and spheroidal protrusions. HVDC analysis takes into account the additional space charge accumulation due to the presence of protrusions.