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Radisic, V; Deal, W R; Leong, K M K H; Mei, X B; Yoshida, W; Po-Hsin Liu; Uyeda, J; Fung, A; Samoska, L; Gaier, T; Lai, R
IEEE transactions on microwave theory and techniques, 2010-July, 2010-07-00, 20100701, Letnik: 58, Številka: 7Journal Article
In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high f MAX InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange out-put for the SSPA module.
