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Sierawski, B.D.; Pellish, J.A.; Reed, R.A.; Schrimpf, R.D.; Warren, K.M.; Weller, R.A.; Mendenhall, M.H.; Black, J.D.; Tipton, A.D.; Xapsos, M.A.; Baumann, R.C.; Xiaowei Deng; Campola, M.J.; Friendlich, M.R.; Kim, H.S.; Phan, A.M.; Seidleck, C.M.
IEEE transactions on nuclear science, 12/2009, Letnik: 56, Številka: 6Journal Article
Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron technologies. The experimental data are used to calibrate a Monte Carlo rate prediction model, which is used to evaluate the importance of this upset mechanism in typical space environments. For the ISS orbit and a geosynchronous (worst day) orbit, direct ionization from protons is a major contributor to the total error rate, but for a geosynchronous (solar min) orbit, the proton flux is too low to cause a significant number of events. The implications of these results for hardness assurance are discussed.
