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Lee, D; Yoon, A; Jang, S Y; Yoon, J-G; Chung, J-S; Kim, M; Scott, J F; Noh, T W
Physical review letters, 07/2011, Letnik: 107, Številka: 5Journal Article
We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
